FDN358P MOSFET Power Electronics Single P-Channel Logic Level Trench

Categories	MOSFET Power Electronics
Brand Name:	onsemi
Model Number:	FDN358P
Place of Origin:	original
MOQ:	1
Price:	Negotiable
Payment Terms:	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability:	999999
Delivery Time:	1-3 days
Packaging Details:	standard
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	125mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Vgs (Max):	±20V

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Company Info.

Shenzhen Sai Collie Technology Co., Ltd.

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Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	125mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.6 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	182 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

p channel mosfet