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FDMA510PZ MOSFET Power Electronics 6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive

Categories MOSFET Power Electronics
Brand Name: onsemi
Model Number: FDMA510PZ
Place of Origin: original
MOQ: 1
Price: Negotiable
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 999999
Delivery Time: 1 - 3 days
Packaging Details: standard
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Mounting Type: Surface Mount
Vgs (Max): ±8V
Operating Temperature: -55°C ~ 150°C (TJ)
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FDMA510PZ MOSFET Power Electronics 6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive

FDMA510PZ MOSFET Power Electronics
6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
30mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
1480 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
6-MicroFET (2x2)
Package / Case

The FDMA510PZ is a 6-WDFN package Power MOSFET from Fairchild Semiconductor. It is designed to deliver low resistance and high current capabilities. This device features a logic level gate threshold voltage of 1.8V and a drain-source breakdown voltage of 40V. It has a continuous drain current of 18A and a maximum pulsed drain current of 60A.


The maximum avalanche energy is 4mJ and the maximum power dissipation is 4W. This device is RoHS compliant and has a maximum junction temperature of 175°C. It is suitable for use in high power DC-DC converters, motor control systems, and other high current, high voltage applications.


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