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YJJ S1336-44BK Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Near Infrared With High Reliability

Categories Infrared Photoelectric Sensor
Brand Name: HAMAMATSU
Model Number: S1336-44BK
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200
Delivery Time: 3 days
Packaging Details: piping
Receiving surface: 1.1 × 1.1 mm
Package: Metal
Package category: TO-18
Reverse voltage (Max.): 5V
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YJJ S1336-44BK Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Near Infrared With High Reliability

Product Description:

S1336-44BK Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Near Infrared With High Reliability


Features:

Suitable for precise photometry in ultraviolet to near-infrared bands

peculiarity

- High sensitivity in UV band

- Low capacitance

- High reliability

Receiving surface 3.6× 3.6mm

Encapsulation metal

Package category TO-18

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 320 to 1100 nm

Maximum sensitivity wavelength (typical value) 960 nm

Photosensitivity (typical value) 0.5A /W

Dark current (Max.) 20 pA

Rise time (typical value) 0.1μs

Junction capacitance (typical) 20 pF

Noise equivalent power (typical value) 5.7×10-15 W/Hz1/2

Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

Sensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz


Specifications:

Spectral response range320 to 1100 nm
Maximum sensitivity wavelength (typical value)960 nm
Photosensitivity (typical value)0.5A /W
Dark current (Max.)20 pA


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