BORN SEMICONDUCTOR BULN2003A Darlington Transistor Arrays
Product Overview
The BORN SEMICONDUCTOR BULN2003A is a versatile 50V, 500mA
Darlington transistor array designed for driving higher current
loads from low-voltage logic. It features seven NPN Darlington
pairs with high-voltage outputs and integrated common-cathode clamp
diodes for switching inductive loads. Each Darlington pair includes
a 2.7k series base resistor, enabling direct operation with TTL or
5V CMOS devices. Applications include relay drivers, hammer
drivers, lamp drivers, display drivers, line drivers, logic
buffers, stepper motors, IP cameras, and HVAC valves.
Product Attributes
- Brand: BORN SEMICONDUCTOR
- Product Name: BULN2003A
- Package Type: SOP-16
Technical Specifications
| Parameter | Value | Unit |
|---|
| Collector Current (Single Output) | 500 | mA |
| High-Voltage Outputs | 50 | V |
| Output Clamp Diodes | Integrated | - |
| Inputs Compatibility | Various Types of Logic | - |
| Collector-emitter voltage (VCE) | 0 to 50 | V |
| Ambient temperature (TA) | -40 to 85 | C |
| Junction-to-ambient thermal resistance (RJA) | 66.4 | C/W |
| Junction-to-case (top) thermal resistance (RJC(top)) | 29.5 | C/W |
| Junction-to-board thermal resistance (RJB) | 33.0 | C/W |
| Input voltage (VIN) | -0.3 to 30 | V |
| Peak collector current (IC) | 500 | mA |
| Output clamp current (ICP) | 500 | mA |
| Operating virtual junction temperature (TJ) | -55 to 150 | C |
| Storage temperature range (TSTG) | -55 to 150 | C |
| Human body model (HBM) ESD Rating (V(ESD)) | 2000 | V |
| Charged device model (CDM) ESD Rating | 500 | V |
| Collector-emitter saturation voltage (VCE(sat)) (Typical IC=100 mA,
II=250A) | 0.9 | V |
| Collector cutoff current (ICEX) (VCE=50V, II=0) | 50 | A |
| Input capacitance (Ci) (VI=0, f=1 MHz) | 15 to 25 | pF |
| Propagation delay time, low-to-high-level output (tPLH) | 130 | ns |
| Propagation delay time, high-to-low-level output (tPHL) | 20 | ns |
Detailed Description
The BULN2003A integrates seven high-voltage, high-current NPN
Darlington transistor pairs, each capable of sinking up to 500 mA.
These pairs feature common emitters and open collector outputs,
along with integrated suppression diodes to protect against
inductive load kick-back. A 2.7k series base resistor on each input
allows for direct interfacing with TTL or 5V/3.3V CMOS logic. The
device is suitable for applications requiring significant current
sourcing or sinking capabilities, such as driving relays,
solenoids, lamps, and small motors. Outputs can be paralleled for
increased current handling.
Device Functional Modes
- Inductive Load Drive: When the COM pin is connected to the coil supply voltage, the
internal free-wheeling diodes suppress kick-back voltage from
inductive loads.
- Resistive Load Drive: The COM pin can be left unconnected or connected to the load
voltage supply. If multiple supplies are used, connect to the
highest voltage supply.
Application Information
The BULN2003A is ideal for interfacing low-voltage microcontrollers
or logic devices with higher voltage and current peripherals. A
common application involves driving inductive loads like motors,
solenoids, and relays. Key design considerations include input
voltage range, temperature range, output drive current, and power
dissipation. The coil current is determined by the coil voltage,
coil resistance, and the output low voltage (VCE(SAT)). On-chip
power dissipation must be managed to stay within the device's
thermal limits, with a recommended junction temperature limit below
125C.
Power Supply Recommendations
While the part itself does not require a separate power supply, the
COM pin is typically tied to the system power supply. Care must be
taken to ensure the output voltage does not significantly exceed
the COM pin voltage to prevent excessive forward biasing of the
flyback diodes, which could lead to overheating or damage.
Layout Guidelines
Use thin traces for inputs due to low current logic signals.
Separate input channels to minimize crosstalk. Employ thick traces
for outputs to accommodate high currents. The common emitter return
trace should be sized to be very wide, capable of handling up to
2.5 A in some applications.
Package Information
| SYMBOL | MIN. | TYP. | MAX. | UNIT |
|---|
| A | 1.45 | 1.60 | 1.75 | mm |
| A1 | 0.10 | 0.15 | 0.25 | mm |
| A2 | 1.40 | 1.45 | 1.50 | mm |
| A3 | 0.60 | 0.65 | 0.70 | mm |
| b | 0.30 | 0.40 | 0.50 | mm |
| c | 0.15 | 0.20 | 0.25 | mm |
| D | 9.80 | 9.90 | 10.00 | mm |
| E | 5.80 | 6.00 | 6.20 | mm |
| E1 | 3.80 | 3.90 | 4.00 | mm |
| e | 1.27BSC | - |
| L | 0.50 | 0.60 | 0.70 | mm |
| L1 | 1.05BSC | - |
| 0 | - | 8 | - |
Specifications are subject to change without notice. Please refer
to http://www.born-tw.com for current information.
2508151650_BORN-BULN2003A_C50338755.pdf
HGSEMI ULN2803ADMTR Darlington array IC featuring eight NPN pairs for multi load driving applications
