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| Categories | Single Bipolar Transistors |
|---|---|
| Emitter-Base Voltage(Vebo): | 5V |
| Current - Collector Cutoff: | 50nA |
| Pd - Power Dissipation: | 300mW |
| Transition frequency(fT): | 200MHz |
| type: | PNP |
| Number: | 1 PNP |
| Current - Collector(Ic): | 500mA |
| Collector - Emitter Voltage VCEO: | 350V |
| Operating Temperature: | -55℃~+150℃ |
| Description: | Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 300mW Surface Mount SOT-23 |
| Mfr. Part #: | LMBT6520LT1G |
| Model Number: | LMBT6520LT1G |
| Package: | SOT-23 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The LMBT6520LT1G and S-LMBT6520LT1G are PNP silicon transistors designed for high voltage applications. They offer a combination of high breakdown voltages and moderate current handling capabilities, making them suitable for various electronic circuits.
| Characteristic | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| CollectorEmitter Voltage | V CEO | 350 | Vdc | |
| CollectorBase Voltage | V CBO | 350 | Vdc | |
| EmitterBase Voltage | V EBO | 5.0 | Vdc | |
| Base Current | I B | 250 | mA | |
| Collector Current Continuous | I C | 500 | mAdc | |
| Total Device Dissipation (FR5 Board) | PD | 225 | mW | TA = 25C; Derate above 25C 1.8 mW/C |
| Thermal Resistance, Junction to Ambient (FR5 Board) | RJA | 556 | C/W | |
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA = 25C; Derate above 25C 2.4 mW/C |
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RJA | 417 | C/W | |
| Junction and Storage Temperature | TJ , Tstg | 55 to +150 | C | |
| Off Characteristics | ||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 350 | Vdc | I C = 1.0 mA |
| CollectorBase Breakdown Voltage | V (BR)CBO | 350 | Vdc | I E = 100 A |
| EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | Vdc | I E = 10 A |
| Collector Cutoff Current | I CBO | 50 | nA | V CB = 250V |
| Emitter Cutoff Current | I EBO | 50 | nA | V EB = 4.0V |
| On Characteristics | ||||
| DC Current Gain | hFE | 20200 | See detailed conditions below | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.30 to 1.0 | Vdc | See detailed conditions below |
| Base Emitter Saturation Voltage | VBE(sat) | 0.75 to 0.90 | Vdc | See detailed conditions below |
| BaseEmitter On Voltage | V BE(on) | 2.0 | Vdc | I C = 100mAdc, V CE = 10V |
| Small-Signal Characteristics | ||||
| Current GainBandwidth Product | f T | 40200 | MHz | V CE = 20 V, I C = 10mA, f = 20 MHz |
| Collector Base Capacitance | C cb | 6.0 | pF | V CB = 20 V, f = 1.0 MHz |
| Emitter Base Capacitance | C eb | 100 | pF | V EB= 0.5 V, f = 1.0 MHz |
| Device Marking | Shipping |
| LMBT6520LT1G | 3000/Tape&Reel |
| LMBT6520LT3G | 10000/Tape&Reel |
| S-LMBT6520LT1G | 3000/Tape&Reel |
| S-LMBT6520LT3G | 10000/Tape&Reel |
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