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5ghz rf power transistor

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ADF5901WCCPZ RF Power Transistors High Output Power And Efficiency

China ADF5901WCCPZ RF Power Transistors High Output Power And Efficiency on sale
... • High Gain: 17.9dB @ 2.5GHz • High Efficiency: > 65% @ 2.5GHz • Low Quiescent Current: <100mA • RoHS Compliant • Package: 46-lead, 4mm x 6mm LFCSP Why buy from us >>> Fast / Safely / ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

FMM5832VY 27.5-31.5GHz Power Amplifier MMIC FUJITSU RF Power Transistors RF MODULE

China FMM5832VY 27.5-31.5GHz Power Amplifier MMIC FUJITSU RF Power Transistors RF MODULE on sale
FMM5832VY is a 27.5-31.5GHz Power Amplifier MMIC. Part NO: FMM5832VY Brand: FUJITSU Date Code: 0228+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

X Band 7-10.5GHz RF Power Amplifier Module Low Power Consumption In Satallite Communication Super High Frequency PA

China X Band 7-10.5GHz RF Power Amplifier Module Low Power Consumption In Satallite Communication Super High Frequency PA on sale
... power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module ......
VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

China RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers on sale
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND  ...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

Durable 6-26.5ghz Rf Power Divider 8 Way Rf Splitter For Microwave

China Durable 6-26.5ghz Rf Power Divider 8 Way Rf Splitter For Microwave on sale
... quality, Low price, Fast delivery. 4.Custom design available upon request. 5.Competitive price. 6. High powercapacity,. excellent isolation. Rf Power Divider quick detalis: Place of Origin:Sichuan, China Brand Name:Sinoscite Model Number:BJ320(WR28)...
Chengdu SinoScite Technology Co., Ltd.

Address: Huidu Headquarters Industrial Park, No. 4 Xinye Road, High-tech West District, Chengdu City, Sichuan Province, CN

50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

China 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor on sale
...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.

Address: Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province

D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET

China D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET on sale
...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting

China MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting on sale
Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely ......
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS

China PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS on sale
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates......
Angel Technology Electronics Co

Address: FL16 Coastal Buidling East Block Nanshan District Shenzhen China 518000

BFS505 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor

China BFS505 15V  RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor on sale
...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF......
DELI ELECTRONICS TECHNOLOGY CO.,LTD

Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

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