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ingots sic substrate

from 19 Products

8 Inch 200mm N Type Silicon Carbide Wafer Crystal Ingots SiC Substrate

China 8 Inch 200mm N Type Silicon Carbide Wafer Crystal Ingots SiC Substrate on sale
...SiC Wafers/8inch 200mm N-type SiC Crystal Wafers Ingots SiC substrate​/2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC...
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic

China 12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic on sale
12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H Type Conductive Solar Photovoltaic Product introduction 12 inch SiC substrate (12-inch SiC substrate) is a large silicon carbide (SiC) wafer, mainly used in ......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

SiC Ingots Supplier offer 6 inch SiC Substrate

China SiC Ingots Supplier offer 6 inch SiC Substrate on sale
SiC Ingots Supplier offer 6 inch SiC Substrate Homray Material Technology offersthe best price on the market for high quality SiC Ingots, SiC wafers. The major products are 4 inch 6 inch SiC Ingots andsubstrate, widely used in electronic devices with ......
Homray Material Technology

Address: 苏州吴中区苏蠡路

6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer

China 6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer on sale
...6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device on sale
... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd

Address: Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109

LED Substrate Grinding Wheels Metal Bonded Abrasives ISO14001

China LED Substrate Grinding Wheels Metal Bonded Abrasives ISO14001 on sale
...Substrate Application The grinding wheels for LED substrate are mainly used for back thinning of 2”, 4” and 6”LED epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC......
China Abrasives Industry Hainan Corporation

Address: Room 701-702, Dihao Building, Pearl River Plaza, Haikou City, Hainan Province, China

0.3mm Thick Metalized Ceramic Substrate Zirconia ZrO2 Diamond Polished

China 0.3mm Thick Metalized Ceramic Substrate Zirconia ZrO2 Diamond Polished on sale
... 0.3mm Thick Thin Film Zirconia ZrO2 Ceramic Substrate Specification of ceramic rods: 1. Raw material: Yttria stabilized zirconia, MgO stabilized zirconia, 95~99.5% alumina, Silicon carbide (SiC) 2. Forming method: Extruding, Dry pressed, Ceramic injection......
Jinghui Industry Limited

Address: 8th Building, Futing Industrial Park, Zhu village, Guanlan, Longhua, Shenzhen, China

Spiral SIC 600 Rpm Rotary Degassing Heating Aluminium Refining Process For Ingot

China Spiral SIC 600 Rpm Rotary Degassing Heating Aluminium Refining Process For Ingot on sale
On-Line Rotory Degassing Unit Launder Type For Producing Aluminum Ingot Molten Aluminum Box type Four Graphite Rotor in-line rotory degassing Equipment 1. Genernal Description • The LDU has higher degassing efficiency because degassing rotors are mounted......
Jinan Hydeb Thermal Tech Co., Ltd.

Address: Haixinchuangzhigu 1-1208, Gaoxin District of Ji’nan City, Shandong, China, 250101

High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance

China High Hardness 9 Mohs Sapphire Ingot Excellent Temperature Resistance on sale
...ingot Product Description Sapphire (Sapphire, molecular formula Al2O3) single crystal is an excellent multifunctional material. It has high temperature resistance, good thermal conductivity, high hardness, infrared transmission and good chemical stability. At the same time, it is also a widely used single crystal substrate material, and it is the substrate......
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.

Address: No.99 Tong Xi Road, Caijia Town, Beibei District, Chongqing,China

Power Module Fourpack Topology A2F12M12W2-F1 SiC Power MOSFET IGBT Module Full Bridge

China Power Module Fourpack Topology A2F12M12W2-F1 SiC Power MOSFET IGBT Module Full Bridge on sale
...SiC Power MOSFET IGBT Module Full Bridge Description Of A2F12M12W2-F1 This A2F12M12W2-F1 is ACEPACK 2 power module in fourpack topology integrates advanced silicon carbide Power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

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