PTF102028 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor RF Power Transistors ERICSSON
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...Transistor RF Power Transistors. Part NO: Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers......
Mega Source Elec.Limited
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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SZA5044Z Radio Frequency Amplifiers RF Amplifier IRFHM9331TRPBF MSP430FR2100IPW16R Wireless RF Integrated Circuits
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...Amplifiers RF Amplifier IRFHM9331TRPBF MSP430FR2100IPW16R Wireless RF Integrated Circuits Product Description RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier......
Walton Electronics Co., Ltd.
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Radio Frequency Amplifier UHF 100 Watt Wideband RF Amplifier For Signal Jammer
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... can be used for signal jammer assembly . This RF module has rugged exterior aluminum alloy shell , and with temperature and standing wave protection , have good performance . Other frequency bands of RF module can be customized as below : 10-6000MHz ,5...
Shenzhen TeXin electronic Co., Limited
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High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement
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...Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier......
Nanjing Shinewave Technology Co., Ltd.
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Wireless / Radio / Broadband Rf Amplifier 1.1 – 1.7 GHz Frequency Band
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Wireless / Radio / Broadband Rf Amplifier 1.1 – 1.7 GHz Frequency Band Solid State High Power 1.1-1.7GHz RF Power Amplifier PA , RF Power Amplifier Module POWER AMPLIFIER FEATURES: Class A/AB linear GaN design Rack mounted system Instantaneous wide ......
VBE Technology Shenzhen Co., Ltd.
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ZFL-500LN+ RF Amplifier Low Noise Amplifier, 0.1 - 500 MHz 50Ω
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...: 60 mA Gain: 24 dB NF - Noise Figure: 2.9 dB Type: Low Noise Amplifiers Mounting Style: SMD/SMT Package / Case: Y460 P1dB - Compression Point: 5 dBm OIP3 - Third Order Intercept: 14 ......
Wisdtech Technology Co.,Limited
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Rf Amplifier 22232041 Electronic Components Ics MOLEX CONN Programmer Ic Chip
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...wide range of electronic components to meet your diverse needs. Semiconductors: microcontrollers, transistors, diodes, integrated circuits (ICs Passive Components:resistors, capacitors, inductors Connectors. Electromechanical Components:switches, relays,...
ShenZhen QingFengYuan Technology Co.,Ltd.
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BIAMP Universal Cb Radio RF Amplifier High Power BiDirectional
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...RF Amplifier BiAMP RF Power Amplifier Provides 40/20/10/5W,150M/230M/400M/600M/800M/900M/1.4G/2.3G/5GHz Linear/Unlinear RF Amplifier, Designed For Broadband/Narrowband Digital Data Link Applications. This Series of Amplifiers Adopts Silicon Based Potassium Nitride Power Amplifier, High Speed Automatic Tx/Rx Switching,High Efficiency RF......
Shenzhen Sinosun Technology Co., Ltd.
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MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS
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...RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier......
ChongMing Group (HK) Int'l Co., Ltd
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