800mhz dynamic random access memory

Brand Name:MDTIC

Model Number:MT41J128M16HA-15E-D

Place of Origin:Original

... bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • CAS (READ) latency (CL):

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS42S32800J-7BLI

.... All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS42S16400J-7TL

Product Details Description The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit...

Place of Origin:PHILIPPINE

Brand Name:Alliance Semiconductor Corporation

Model Number:Alliance Semiconductor Corporation

..., extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in

Brand Name:Micron Technology Inc.

Model Number:MT48LC16M16A2P-6A:G TR

Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive ...

Brand Name:Micron Technology Inc.

Model Number:MT48LC16M16A2B4-7E IT:G

Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive ...

Brand Name:Winbond Electronics

Model Number:W949D6DBHX5I

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers...

Brand Name:Winbond Electronics

Model Number:W949D2DBJX5I

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers...

Brand Name:Winbond Electronics

Model Number:W9812G6KH-6

Product Details Description W9812G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words x 4 banks x 16 bits. W9812G6KH delivers a data bandwidth of up to 200M words per second. To fully comply with the personal ...

Brand Name:Winbond Electronics

Model Number:W9464G6KH-5

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers...

Brand Name:MICRON

Model Number:MT48LC4M16A2TG

Place of Origin:Original

... – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the ...

Brand Name:MICRON

Model Number:MT48LC4M16A2TG

Place of Origin:Original

... – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the ...

Brand Name:MDTIC

Model Number:MT41J128M16HA-15E-D

Place of Origin:Original

... bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • CAS (READ) latency (CL):

Brand Name:Macronix

Model Number:MX29F400CTMI-90G

... and reliable read/write non-volatile random access memory. The MX29F400C T/B is packaged in 44-pin SOP, 48-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29F400C T/B offers access time as

Place of Origin:PHILIPPINE

Brand Name:Samsung semiconductor

Model Number:K6R4016v1C-TI10

...Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1C uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte ...

Brand Name:Macronix

Model Number:MX29GL320EHT2I-70G

... GENERAL DESCRIPTION The MX29F080 is a 8-mega bit Flash memory organized as 1024K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F080 is packaged in 40-pin TSOP or 44-...

Brand Name:Infineon Technologies

Model Number:FM24CL16B-GTR

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories...

Brand Name:Macronix

Model Number:MX29GL256FHXFI-90Q

... GENERAL DESCRIPTION The MX29F080 is a 8-mega bit Flash memory organized as 1024K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F080 is packaged in 40-pin TSOP or 44-...

Place of Origin:PHILIPPINE

Brand Name:Brilliance Semiconductor

Model Number:BS62LV1027PCP70

...Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA at 3V/25oC and maximum access...

Categories:FPGA Configuration and Control Memory

Country/Region:china

... ferroelectric random access memory (F-RAM) with an I²C interface, manufactured by Infineon Technologies. It offers high endurance, fast write speeds, and low power consumption, making it ...