dram dynamic random access memory

Brand Name:Alliance Memory, Inc.

Model Number:AS7C256B-15PIN

... data access, low power, and simple interfacing are desired. FEATURES • Organization: 32,768 words × 8 bits • High speed – 10/12/15/20/25/35 ns address access time – 3/3/4/5/6/8 ns output enable access time • Low power consumption – Active:

Brand Name:Alliance Memory, Inc.

Model Number:AS7C1024B-12TJCN

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications.

Brand Name:Alliance Memory, Inc.

Model Number:AS7C1024B-12JCN

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications.

Brand Name:Original Factory

Model Number:S27KS0642GABHM020

Place of Origin:CN

...Memory Chip 200MHz​ Product Description Of S27KS0642GABHM020 S27KS0642GABHM020 64-Mb HyperRAM is a high-speed CMOS, self-refresh DRAM, with HyperBus interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory...

Brand Name:Micron

Model Number:MT47H64M16HR-3 IT:H

... DRAM Technology SDRAM - DDR2 Memory Size 1Gbit Memory Organization 64M x 16 Memory Interface Parallel Clock Frequency 333 MHz Write Cycle Time - Word, Page 15ns Access Time 450 ps Voltage - Supply 1.7V ~ 1.9V Operating Temperature -40°C ~ 95°C

Brand Name:MICRON

Model Number:MT41K512M16HA-125IT:A

... Memory Organization 512M x 16 Memory Interface Parallel Clock Frequency 800 MHz Write Cycle Time - Word, Page - Access Time 13.5 ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C (TC) Mounting Type Surface ...

Brand Name:Original Factory

Model Number:S80KS5122GABHA023

Place of Origin:CN

...DRAM Memory With HYPERBUS Interface Product Description Of S80KS5122GABHA023 S80KS5122GABHA023 HYPERRAM™ 2.0 Memory is a high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. Specification Of S80KS5122GABHA023 Part Number: S80KS5122GABHA023 Product Category: DRAM...

Brand Name:Original Factory

Model Number:S27KS0642GABHI033

Place of Origin:CN

...™ interface, Pseudo SRAM Memory IC. The DRAM array uses dynamic cells that require periodic refresh. Specification Of S27KS0642GABHI033 Part Number: S27KS0642GABHI033 Write Cycle Time - Word, Page: 35ns Interface Support: 1.8 V / 3.0 V Memory Interface:

Model Number:M29W640FB

Place of Origin:original factory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7

Brand Name:Original Factory

Model Number:CY15B102QN-50LHXI

Place of Origin:CN

...advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification Of CY15B102QN-50LHXI Part Number CY15B102QN-50LHXI Clock Frequency 50 MHz Access Time 8 ns Voltage -

Brand Name:Micron Technology Inc.

Model Number:MT40A256M16LY-062E:F

...Memory ICs Mfr Micron Technology Inc． Series - Package Tray Product-Status Active Memory-Type Volatile Memory-Format DRAM Technology SDRAM - DDR4 Memory-Size 4Gb (256M x 16) Memory-Interface Parallel Clock-Frequency 1．6 GHz Write-Cycle-Time-Word-Page - Access...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C316098A-10BIN

...memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C256A-10TCN

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C256A-12JCN

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C4096A-12JIN

... is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Pin ...

Brand Name:Original Factory

Model Number:S70KL1283GABHV023

Place of Origin:CN

... (Octal) interface. TheDRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the xSPI interface master.

Brand Name:NUMONYX

Model Number:M29W640GT70NA6E

Place of Origin:Original

... – Page Width: 4 words – Page Access: 25 ns – Random Access: 60 ns, 70 ns, 90 ns ■ Fast Program commands – 2 word/4 byte Program (without VPP=12 V) – 4 word/8 ...

Brand Name:Original Factory

Model Number:S80KS5122GABHI020

Place of Origin:CN

...DRAM) Memory Chip with HYPERBUS™ interface. Specification Of S80KS5122GABHI020 Part Number: S80KS5122GABHI020 Wrapped Burst Lengths: 64 Bytes (32 Clocks) Linear Burst: 64 Mb Technology: PSRAM (Pseudo SRAM) Access Time: 35 Ns Operating Temperature Range -

Brand Name:ISSI

Model Number:IS42S16400F-6TL

Memory Data Storage Semiconductors Memory ICs DRAM IS42S16400F-6TL 16 Bit Product Range Memory Data Storage Semiconductors Memory ICs DRAM IS42S16400F-6TL DRAM 64M, 3.3v, SDRAM, 4Mx16 16 bit App Characteristics Clock frequency: 200, 166, 143, 133 MHz Fully synchronous; all signals referenced to a positive clock edge Internal bank for hiding row access...