improving memory power

Brand Name:Lianda

Model Number:BC-019

Place of Origin:China

Contour Memory Foam Lumbar Support Back Cushion For Soothe Back Improve Posture Product description REDUCE FATIGUE AND LOWER BACK PAIN – Relieves numbness, soreness and pressure on back, hip and spine caused by long ...

Brand Name:Original

Model Number:LM75AD

...offers improved temperature resolution of 0.125 °C and specification of a single part over power supply range from 2.8 V to 5.5 V Small 8-pin package types: SO8 and TSSOP8 I2 C-bus interface with up to 8 devices on the same bus Power supply range from 2

Brand Name:Ti

Model Number:TPA3123D2PWPR

...Power Amplifier IC Audio Amplifiers 25mW DirectPath St Headphone Amp 1 Features Patented DirectPathTM Technology Eliminates Need for DC-Blocking Capacitors – Outputs Biased at 0 V – Excellent Low Frequency Fidelity Active Click and Pop Suppression 2.1 mA Typical Supply Current Fully Differential or Single-Ended Inputs – Built-In Resistors Reduces Component Count – Improves System Noise Performance Constant Maximum Output Power

Brand Name:Bosch Original

Model Number:BMP180

Place of Origin:Original & New

...Power Digital barometer Air Pressure Sensor Integrated Circuit Chip Description The BMP180 is the new digital barometric pressure sensor of Bosch Sensortec, with a very high performance, which enables applications in advanced mobile devices, such as smartphones, tablet PCs and sports devices. It follows the BMP085 and brings many improvements, like the smaller size and the expansion of digital interfaces. The ultra-low power

Brand Name:POWERINT

Model Number:TOP245PN

Place of Origin:Philippines

...Power, Design Flexible, EcoSmart, Integrated Off-line Switcher Description TOPSwitch-GX uses the same proven topology as TOPSwitch, cost effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry onto a single CMOS chip. Many new functions are integrated to reduce system cost and improve...

Brand Name:Lanke

Model Number:A3B

Place of Origin:China

...) Good Performance Under High Temperature, No Memory Effect (04) Long Cycle Life (05) 100% Capacity Available Advantages 01. Stand By Long 02. Improved Battery Cell And Durable Structure 03. Impact-Resistant Outer Case And Shock-Absorbing Inner-Liner Are

Brand Name:Lanke

Model Number:A3B

Place of Origin:China

...) BMS Compatible With Growatt, Goodwe, Deye, Sma, Etc. (05) 100% Capacity Available (06) Good Performance Under High Temperature, No Memory Effect Advantages Ⅰ. Improved Battery Cell And Durable Structure Ⅱ. Batteries Are Easy to Move And

Brand Name:Lanke

Model Number:PPB038

Place of Origin:China

...Plug And Play 05. Modular Design, Easy Installation 06. Good Performance Under High Temperature, No Memory Effect Advantages Ⅰ. Improved Battery Cell And Durable Structure Ⅱ. The Weight Is Light Enough to Move and Transport Ⅲ. Stand By Long Packing &

Brand Name:Lanke

Place of Origin:China

...Power Bank For Hand Phone 20000mAh With Flashlight Intelligent Quick Charging Features Ⅰ. High Energy Density Ⅱ. Environmental Friendly Ⅲ. Good Performance Under High Temperature, No Memory Effect Ⅳ. Modular Design, Easy Installation Ⅴ. Compact Size And Easy Installation Advantages 01. Improved...

Brand Name:Lanke

Place of Origin:China

...) Modular Design, Easy Installation Advantages 01. We Tried Our Best To Reduce The Weight For Transportation 02. Stand By Long 03. Improved Battery Cell And Durable Structure 04. No Memory Effect And Virtually No

Brand Name:Original Factory

Model Number:MT53E512M64D2NW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E512M64D2NW-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory

Categories:DDR Memory

Country/Region:china

... UDIMM Series l DDR4 Memory for PC - Utilizes DDR4 technology, offering significant improvements in speed and efficiency over DDR3 memory. l PC Performance Optimization - DDR4 memory modules offer higher speeds and lower latencies, crucial for handling the

Brand Name:Original Factory

Model Number:MT53E768M32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount Product Description Of MT53E768M32D2NP-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dynamic random access storage device. The memory device is optimized to solve power consumption problems in battery-powered applications. LPDDR4 memory devices are ideal for handheld devices, battery-powered...

Brand Name:ONSEMI

Model Number:SN74LS240N

Place of Origin:Original

...POWER SCHOTTKY Signal Schottky diode Schottky Barrier Diode The SN74LS240 and SN74LS244 are Octal Buffers and Line Drivers designed to be employed as memory address drivers, clock drivers and bus-oriented transmitters/receivers which provide improved PC board density. • Hysteresis at Inputs to Improve Noise Margins • 3-State Outputs Drive Bus Lines or Buffer Memory...

Brand Name:Micron Technology Inc.

Model Number:MT48LC4M16A2P-6A:J

Place of Origin:Multi-origin

...Memory Chips Product Features: - 4M x 16 bit organization - Single power supply operation - 2.7V to 3.6V - Fast page access time - Low power consumption - Fast write cycle time - Data retention up to 10 years - Packaged in 48-pin TSOP-II Product Status Active Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 64Mbit Memory Organization 4M x 16 Memory...

Brand Name:Original Factory

Model Number:MT53E256M32D2DS-046 AAT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2DS-046 AAT:B 8Gbit SDRAM Mobile LPDDR4 Memory IC Product Description Of MT53E256M32D2DS-046 AAT:B MT53E256M32D2DS-046 AAT:B LPDDR4 Memory optimized to solve power consumption problems in battery-powered applications. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. LPDDR4 memory devices are ideal for handheld devices, battery-powered...

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Specification Of MT53E1G32D2NP-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory...