integrated dc current source

Model Number:2SC1623W

Product Overview The 2SC1623W is an NPN transistor featuring high DC current gain (hFE=200 Typ) at VCE=6V, IC=1mA and high voltage capability with a VCEO of 50V. This transistor is housed in a ...

Model Number:BC807-25

... suited for automatic insertion. A complementary PNP type (BC817) is available. It offers a high DC current gain and is designed for general-purpose applications.Product Attributes Brand: FUXINSEMICONDUCTOR Complementary Type: BC817 (PNP) Package: SOT-...

Model Number:2SC1623（L6）

Product Overview The 2SC1623 is an NPN bipolar transistor designed for surface mount applications. It features high DC current gain (hFE=200 Typ), high voltage capability (VCEO=50V), and is complementary to the 2SA812. This device is housed in a compact ...

Model Number:JTDMMDT3906DW

...construction dual PNP transistor designed for low power amplification and switching applications. It features high DC current gain and fast switching speeds, making it suitable for various electronic circuits.Product Attributes Brand: JTD ELECTRONICS Origin...

Model Number:JTDS9015W

... is a PNP bipolar junction transistor (BJT) designed for small surface mount applications. It offers high DC current gain, making it suitable for various amplification and switching tasks in electronic circuits. Product Attributes Brand: SHENZHEN JTD ...

Model Number:MJD122

...MJD122 is a medium power NPN Darlington transistor designed for linear switching applications. It offers high DC current gain and features a built-in damper diode between the collector and emitter for enhanced protection. This device is electrically ...

Model Number:2SC1623

Product Overview High DC current gain and high voltage transistors in SOT-23 package. Designed for general-purpose applications.Product Attributes Case Style: ...

Model Number:BC817-25-AU_R1_000A1

Product Overview The PBC817-16-AU, BC817-25-AU, and BC817-40-AU are silicon NPN epitaxial general purpose transistors designed for amplifier applications. They offer excellent DC current gain characteristics and are AEC-Q101 qualified. These transistors...

Model Number:MJD122

Product Overview The MJD122 M is a TO-252 Plastic-Encapsulate Transistor featuring high DC current gain and a built-in damper diode at the E-C junction. It is electrically similar to the popular TIP122 and complementary to the MJD127.Product Attributes ...

Model Number:2SA1037-R

... The 2SA1037-R is a PNP Silicon Epitaxial Planar Transistor. It is subdivided into three groups (Q, R, and S) based on its DC current gain. This transistor can be manufactured in different pin configurations upon special request.Product Attributes Brand...

Model Number:MJE340G

... for high voltage and general purpose applications. It features a Collector-Emitter Sustaining Voltage of 300V (Min), a DC Current Gain of 100 (Min) @ IC=50mA, and a low Collector Saturation Voltage of 1.0V (Max.) @ IC=50mA. It is a complement to the ...

Model Number:2SD667A

...a complementary pair with the 2SB647/A. It offers robust performance with high breakdown voltages and reliable DC current gain characteristics.Product Attributes Brand: JSMICRO Semiconductor Product Type: Transistor (NPN) Package: TO-92Technical Specifications Model...

Model Number:TIP126-JSM

...general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain, and low collector saturation voltage. These transistors are complementary to the TIP120/121/122 series.Product Attributes Brand: JSMICRO ...

Model Number:MJ15025G-JSM

Product Overview The MJ15023-MJ15025 series are PNP power transistors featuring high DC current gain (hFE = 15 Min @ IC = 8A) and an excellent safe operating area. Designed for high power audio, disk ...

Model Number:MJE700T-JSM

...PNP Darlington Power Transistor designed for general-purpose amplifier and low-speed switching applications. It offers a high DC Current Gain (hFE) of 750 minimum at IC=-1.5 A and a Collector-Emitter Breakdown Voltage of -60 V. It is a complement to the ...

Model Number:2SB1386T100R

... designed for low-frequency applications, offering low VCE(sat) of -0.35V (Typ.) and excellent DC current gain characteristics. They serve as complements to the 2SD2098 / 2SD2118 / 2SD2097 series.Product Attributes Brand: ROHM Structure: Epitaxial planar...

Model Number:2SD1781R

... of 500mA / 50mA. This transistor complements the 2SB1197 and is suitable for use in common emitter configurations. Key features include a high DC current gain (hFE) and a transition frequency (fT) of 150 MHz. It is packaged in a SOT-23 format. Product

Model Number:2SD2098-R

Product Overview The 2SD2098 is an NPN transistor designed for general-purpose applications. It features low VCE(sat) and excellent DC current gain characteristics. This transistor complements the 2SB1386 and is supplied in a SOT-89 package. Product ...

Model Number:2SA1298-Y,LF

.... Key advantages include high DC current gain (hFE = 100 to 320), low saturation voltage (VCE (sat) = -0.4 V max), and suitability as a driver stage for small motors. It is ...

Model Number:2SC2881-Y

.... Key electrical characteristics include a collector-base breakdown voltage of 120V and a collector-emitter breakdown voltage of 120V. With a typical DC current gain (hFE) ranging from 80 to