logic memory ic chip

Brand Name:Original Factory

Model Number:M321R8GA0PB0-CWM

Place of Origin:CN

M321R8GA0PB0-CWM Memory IC Chip BGA-288 Dual-Row In-Line Memory Module With Memory​ Product Description Of M321R8GA0PB0-CWM M321R8GA0PB0-CWM is a dual in-line memory module with memory in a 288-PIN package for high-performance applications such as servers...

Brand Name:Original Factory

Model Number:MT61K512M32KPA-14C:B

Place of Origin:CN

...Memory IC Chip GDDR6 SGRAM Memory 16Gbit Dynamic Random-Access Memory Product Description Of MT61K512M32KPA-14C:B MT61K512M32KPA-14C:B GDDR6 SGRAM is a high-speed dynamic random-access memory designed for applications requiring high bandwidth. It is internally configured as 16‐bank memory...

Brand Name:Original Factory

Model Number:AT45DB081E-SHN-T

Place of Origin:CN

... with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. AT45DB081E-SHN-T also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software ...

Brand Name:Original Factory

Model Number:W631GU6MB-11

Place of Origin:CN

...Memory IC Chip 1Gbit Parallel 933MHz DDR3L SDRAM Memory Product Description Of W631GU6MB-11 W631GU6MB-11 is a 1G bits DDR3L SDRAM, organized as 8,388,608 words 8 banks 16 bits. This device achieves high speed transfer rates up to 2133 MT/s (DDR3L-2133) for various applications. Specifications Of W631GU6MB-11 Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 1Gbit Memory Organization 64M x 16 Memory

Brand Name:Original Factory

Model Number:MT53E2G32D4DE-046 WT:A

Place of Origin:CN

...) is a high-speed CMOS dynamic random access storage device. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. Typical applications include automotive, industrial and consumer ...

Brand Name:Original Factory

Model Number:MT53E2G32D4DE-046 AAT:A

Place of Origin:CN

...) is a high-speed CMOS dynamic random access storage device. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. Typical applications include automotive, industrial and consumer ...

Brand Name:Original Factory

Model Number:MT53E256M32D2DS-053 AUT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2DS-053 AUT:B 8Gbit 1.866 GHz SDRAM - Mobile Memory Product Description Of MT53E256M32D2DS-053 AUT:B MT53E256M32D2DS-053 AUT:B is designed in multi-chip package and Package stack to save PCB space. Optimized to address power consumption in battery-powered applications, the device is ideal for handheld devices, battery-powered applications and ultra-portable devices. Specification Of MT53E256M32D2DS-053 AUT:B Memory...

Brand Name:Original Factory

Model Number:MT53E1G32D2FW-046 AUT:A

Place of Origin:CN

Memory IC Chip MT53E1G32D2FW-046 AUT:A 32Gbit Parallel 2.133 GHz LPDDR4X Memory Product Description Of MT53E1G32D2FW-046 AUT:A MT53E1G32D2FW-046 AUT:A 32Gb Mobile low-power DDR4 SDRAM (LPDDR4x) is a high-speed CMOS dynamic random access storage device optimized to address power consumption in battery-powered applications. The memory device uses multi-chip...

Brand Name:Original Factory

Model Number:P3A8GL4BLF-GJN

Place of Origin:CN

P3A8GL4BLF-GJN Memory IC Chip DDR4 8Gb SDRAM Memory BGA Package Product Description Of P3A8GL4BLF-GJN P3A8GL4BLF-GJN is DDR4 8Gb SDRAM Memory in BGA package. DDR4 memory chips offer higher frequencies, lower voltages and greater capacities, delivering ...

Brand Name:Original Factory

Model Number:W25N01KVZEIR

Place of Origin:CN

...Memory IC Chip 1Gbit SLC QspiNAND Flash Memory Chip WSON8​ Product Description Of W25N01KVZEIR W25N01KVZEIR is 1Gbit, SLC QspiNAND Flash Memory provides a storage solution for systems with limited space, pins and power. W25N01KVZEIR operates on a single 2.7V to 3.6V power supply with current consumption as low as 25mA active and10µA for standby. W25N01KVZEIR 1Gbit memory...

Brand Name:Original Factory

Model Number:CYEL18V5122-200BKXE

Place of Origin:CN

...-power, high bandwidth Pseudostatic RAM (pSRAM), it is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial ...

Brand Name:Original Factory

Model Number:MT41K128M16JT-125 IT:K

Place of Origin:CN

...Memory IC Chip 2Gbit DDR3L SDRAM Memory Chip FBGA96 Product Description Of MT41K128M16JT-125 IT:K MT41K128M16JT-125 IT:K is a 2Gbit capacity DDR3L Synchronous Dynamic Random‑Access Memory (SDRAM) in an FBGA-96 package. Specification Of MT41K128M16JT-125 IT:K Type: SDRAM - DDR3L Memory...

Brand Name:Original Factory

Model Number:KHA884901X-MC12

Place of Origin:CN

KHA884901X-MC12 Memory IC Chip 8GB HBM2 Aquabolt Series DRAM Memory In MPGA Package​ Product Description Of KHA884901X-MC12 KHA884901X-MC12 is HBM2 Aquabolt Series DRAM Memory Chip, it is optimized for high-bandwidth operation to a stack of multiple DRAM...

Brand Name:Original Factory

Model Number:M15T4G16256A-DEBG2C

Place of Origin:CN

...double data rate architecture to achieve high-speed operation. It is internally configured as an eight-bank DRAM. The 4Gb chip is organised into 32Mbit x 16 I/O x 8 memory devices. These synchronous devices achieve high-speed, dual-data-rate data rates of

Model Number:H5AN8G6NDJR-XNC

Place of Origin:CN

Brand Name:Original Factory

...Memory IC Chip 8Gb DDR4 SDRAM ETT Memory In FBGA-96 Package Product Overview H5AN8G6NDJR-XNC is a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for main memory applications requiring large memory density and high bandwidth. Key Features VDD=VDDQ=1.2V +/- 0.06V Fully differential clock inputs (CK, CK) operation Differential Data Strobe (DQS, DQS) On chip...

Brand Name:Microchip Technology / Atmel

Model Number:ATMEGA2561-16AU

Place of Origin:Malaysia

IC MCU 8BIT 256KB FLASH 64TQFP ATMEGA2561-16AU Flash Memory IC Chip New Features • High Performance, Low Power AVR® 8-Bit Microcontroller • Advanced RISC Architecture – 135 Powerful Instructions – Most Single Clock Cycle Execution – 32 × 8 General Purpose Working Registers – Fully Static Operation – Up to 16 MIPS Throughput at 16MHz – On-Chip 2-cycle Multiplier • High Endurance Non-volatile Memory...

Brand Name:Original Factory

Model Number:MT62F1536M64D8CZ-023 AAT:C

Place of Origin:CN

.... Specification Of MT62F1536M64D8CZ-023 AAT:C Part Number: MT62F1536M64D8CZ-023 AAT:C Product Category: DRAM Type: SDRAM Mobile - LPDDR5 Memory Size: 96 Gbit Data Bus Width: 64 bit Organization: 1.5 G x 64 Supply Voltage - Min:

Brand Name:Original Factory

Model Number:MT62F768M64D4CZ-023 AIT:C

Place of Origin:CN

... Chip.The LPDDR5 DRAM addresses these requirements with a 50% increase in data access speeds. The DRAM allows 5G smartphones to process data at ...

Brand Name:Original Factory

Model Number:KLM4G1FETE-B041

Place of Origin:CN

..., and an operating temperature range of -25 to 85 °C. Offering outstanding energy efficiency and significantly enhanced speed, it represents an ideal flash memory solution for developing ultra-slim mobile devices.

Brand Name:Original Factory

Model Number:MT53E1G16D1FW-046 AAT:A

Place of Origin:CN

...) is a high-speed CMOS dynamic random access storage device. Specification Of MT53E1G16D1FW-046 AAT:A Memory Size 16Gbit Memory Organization 1G x 16 Memory Interface Parallel Clock Frequency 2.133 GHz Write Cycle Time - Word, Page 18ns Access Time 3.5