multiple type input electronic pressure switch

Brand Name:onsemi

Model Number:FDMS86182

Place of Origin:original

...(th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 24 nC @ 6 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max)

Brand Name:onsemi

Model Number:NTMFS5C430NLT1G

Place of Origin:original

...Electronics 8-PowerTDFN N-Channel Enhancement Mode Resistance Fast Switching Capability FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FDB110N15A

Place of Origin:original

...) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4510 pF @

Brand Name:onsemi

Model Number:FDD86381-F085

Place of Origin:original

...Electronics TO-252-3 Switching Transistor High Current High Voltage Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 21mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:NTHL190N65S3HF

Place of Origin:original

...Electronics TO-247-3 Transistor for High Current Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 430µA Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V Vgs (Max) ±30V Input...

Brand Name:onsemi

Model Number:FCH165N60E

Place of Origin:original

...) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss)

Brand Name:onsemi

Model Number:NTLJS2103PTBG

Place of Origin:original

...(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max)

Brand Name:onsemi

Model Number:NVGS5120PT1G

Place of Origin:original

...Electronics N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 111mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.1 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FDD86250

Place of Origin:original

...) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @

Brand Name:onsemi

Model Number:FDPF51N25

Place of Origin:original

...) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V Vgs (Max) ±30V Input Capacitance (Ciss) (Max)

Brand Name:onsemi

Model Number:BSS123LT1G

Place of Origin:original

...Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:NTR4003NT1G

Place of Origin:original

...Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.15 nC @ 5 V Vgs (Max) ±20V Input

Brand Name:onsemi

Model Number:NTS4001NT1G

Place of Origin:original

... Vgs(th) (Max) @ Id 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 5 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @

Brand Name:onsemi

Model Number:FCMT299N60

Place of Origin:original

...Electronics – High Efficiency and Reliable Power Switching Device for Industrial Applications ET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 299mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:NTR2101PT1G

Place of Origin:original

...(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @

Brand Name:onsemi

Model Number:NTR4170NT1G

Place of Origin:original

...(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.76 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @

Brand Name:onsemi

Model Number:FDBL9406-F085T6

Place of Origin:original

...) @ Id 3.5V @ 190µA Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 4960 pF @ 25 V

Brand Name:onsemi

Model Number:FDBL0150N60

Place of Origin:original

...) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 169 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10300 pF @

Brand Name:onsemi

Model Number:FDN5618P

Place of Origin:original

...Electronics TO-236-3 Transistor High Performance Low On Resistance High Speed Switching FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 1.25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 170mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.8 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FDC655BN

Place of Origin:original

...Electronics SOT-23-6 High Voltage Current Switching Ideal Automotive Industrial Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V Vgs (Max) ±20V Input...