n channel low rds mosfet

Brand Name:Infineon

Model Number:IRF8714TRPBF

Place of Origin:original

... Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.7mOhm @ 14A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (...

Place of Origin:CN

Brand Name:Original Factory

Model Number:EVAL-1ED44173N01B

...-1ED44173N01B Embedded Solutions 1-Channel Low-Side MOSFET Gate Driver Evaluation Board [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:20G04S

...Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS =40V,ID =20A RDS(ON) < 35mΩ @ VGS=10V RDS(ON) < 42mΩ @ VGS=4.5V P-Channel VDS =-40V,ID = -18A RDS(ON) <40mΩ @ VGS=-10V RDS...

Brand Name:FAIRCHILD

Model Number:FDV305N

Place of Origin:Original

...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON

Brand Name:Toshiba

Model Number:SSM3K361R,LF

Place of Origin:China

...Channel 20V 3A MOSFET with Ultra-Low 40mandOmega; RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs andnbsp; Featuresandnbsp; AEC-Q101 qualified (Please see the orderable part number list) 175℃ MOSFET 4.5 V drive Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS...

Brand Name:FAIRCHILD

Model Number:FDV305N

Place of Origin:Original

...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON

Brand Name:Huixin

Model Number:BC3400

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BC3400 N-Channel Enhancement Mode Field Effect Transistor BC3400 SOT-23 Datasheet.pdf FEATURES High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Maximum ratings...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low...

Model Number:YSP040N010T1A

...100V N-Channel Power MOSFETs designed for high-efficiency applications. They feature extremely low on-resistance (RDS(on)) and an excellent Qg x RDS(on) product (FOM), making them ideal for demanding power management tasks. These MOSFETs are qualified ...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

Product Introduction of Infineon IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-...

Brand Name:CANYI

Model Number:3N80

Place of Origin:Guangdong, China

...good heat dissipation Ultra low gate charge Low reverse transfer capacitance Fast switching capability Avalanche energy specified General description of insulated gate bipolar transistor The 3N80 provide excellent RDS(ON)low gate charge and operation with

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate ...

Model Number:IXFN39N90

Brand Name:Original

Place of Origin:US

...Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220 mOhm @ 500mA, ...

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

...Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS...

Brand Name:ON Semiconductor

Model Number:FDMC510P

Place of Origin:CHINA

...Channel 20V POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON), switching performance and ruggedness. FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds...

Brand Name:Original brand

Model Number:NTMFS5H419NLT1G

Place of Origin:Original

Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW COSS NTMFS5H419NLT1G Transistor Polarity N-Channel Channel No. 1 Channel...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

.... The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=

Brand Name:Original Factory

Model Number:BSC004NE2LS5ATMA1

Place of Origin:China

...Integrated Circuits Chip N Channel Power MOSFET Product Description Benchmark switching performance (minimum quality factor RDS(on) x Qg and RDS(on) x Qgd) Specific components optimized for toroidal circuits to provide low RDS(on) Parts with integrated ...