n channel mos field effect transistor

Brand Name:Hua Xuan Yang

Model Number:1606 D-U-V

Place of Origin:ShenZhen China

Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management Mos Field Effect Transistor Description The Mos Field Effect Transistor is a type of MOSFET. The operating principle of power MOSFET is similar to the general MOSFET. The power ...

Brand Name:Hua Xuan Yang

Model Number:G210P06LQ1 D-U-V

Place of Origin:ShenZhen China

...Mos Field Effect Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) Mos Field Effect Transistor...

Brand Name:Hua Xuan Yang

Model Number:1606 D-U-V

Place of Origin:ShenZhen China

Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management Mos Field Effect Transistor Description The Mos Field Effect Transistor is a type of MOSFET. The operating principle of power MOSFET is similar to the general MOSFET. The power ...

Brand Name:Hua Xuan Yang

Model Number:G210P06LQ1 D-U-V

Place of Origin:ShenZhen China

...Mos Field Effect Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) Mos Field Effect Transistor...

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G023N03LR1D-U-V

Place of Origin:ShenZhen China

Customized Size Mos Field Effect Transistor With Low ON Resistance Mos Field Effect Transistor Introduction Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher voltages are not so easily achievable. Where...

Brand Name:Hua Xuan Yang

Model Number:G023N03LR1D-U-V

Place of Origin:ShenZhen China

Customized Size Mos Field Effect Transistor With Low ON Resistance Mos Field Effect Transistor Introduction Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher voltages are not so easily achievable. Where...

Brand Name:Anterwell

Model Number:2SK3561

Place of Origin:original factory

N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY3404

SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY3404

SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET ...

Brand Name:Hua Xuan Yang

Model Number:G110P04LQ1D-U-V

Place of Origin:ShenZhen China

Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management Power MOSFET types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different manufacturers...

Brand Name:Hua Xuan Yang

Model Number:G110P04LQ1D-U-V

Place of Origin:ShenZhen China

Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management Power MOSFET types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different manufacturers...

Brand Name:ANTERWELL

Model Number:2SK3797

Place of Origin:Malaysia

IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 2SK3797 Field Effect Transistor Silicon N-Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) • High forward transfer ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY4264

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ General Description Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate Charge Applications High efficiency power ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY4466

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V I = 10A VGS = 10V) RDS(ON) < 23mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) General Description The HXY4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY2302Z

SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on)<60mΩ@VGS=4.5V RDS(on)<73mΩ@VGS=2.5V ID=2.3A VDSS=20V Maximum ratings (Ta=25℃ unless otherwise noted) T =25 a ℃ unless otherwise specified Typical Characteristic

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY2312

SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications ...