navigation rf power amp

Brand Name:Analog Devices Inc.

Model Number:AD9364BBCZ

Place of Origin:Multi-origin

AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ...

Brand Name:Analog Devices Inc.

Model Number:HMC199MS8ETR

Place of Origin:Multi-origin

...RF Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high power applications up to 2-500MHz, and provides outstanding performance and efficiency. It has a high power gain of 28.5dB and a maximum output power...

Brand Name:VBE

Model Number:VBP10-13GL

Place of Origin:China

...-13GHz , Ku-Band , Low Noise Amplifier , LNA , RF Power Amplifier Module VBE RF Amplifier Module Introductions : VBE Provide solutions of RF module including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio ...

Brand Name:VBE

Model Number:VBP58-64GU

Place of Origin:China

C-Band 5850-6425MHz RF Up converter , RF Power Amplifier Module VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio Frequency ...

Brand Name:VBE

Model Number:VBP2GL

Place of Origin:China

2GHz , S-Band , Low Noise Amplifier LNA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio...

Brand Name:VBE

Place of Origin:CHINA

... of ≤-30dBc. Its operating temperature range is from -40℃ to +85℃ with a VSWR of 1.5:1. The connector type is SMA-F. This module is ideal for applications requiring high power and high reliability in

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-50W

Place of Origin:China

...Power RF Power Amplifier 50dBm Gain LAN 2kg Weight ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-Circuit We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Parameters: Frequency Range 500-2400MHz Gain ≥50dB Small Signal Gain Flatness ≤4dB Power...

Brand Name:Mitsubishi

Model Number:RA45H8994M1-101

Place of Origin:JP

RA45H8994M1-101 896-941MHz 45W 12.8V, 2 Stage Amp. RF transistor For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected ...

Brand Name:VBE

Model Number:VBP7-10GL

Place of Origin:China

... power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module ...

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-25W

Place of Origin:China

High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-...

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM1200-100W

Place of Origin:China

... the interference of high radiated RF power to monitoring-unit and PA-Circuit; We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ...

Brand Name:Analog Devices Inc.

Model Number:AD630ARZ

Place of Origin:Multi-origin

AD630ARZ RF Power Transistor 300V 7A 60W TO-220 Package Product Listing: Product Name: AD630ARZ RF Power Transistor Product Description: This AD630ARZ RF Power Transistor is a high-performance, high-efficiency device designed for use as a power amplifier...

Brand Name:Analog Devices Inc.

Model Number:AD8361ARMZ-REEL7

Place of Origin:Multi-origin

... Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ...

Brand Name:SWT

Model Number:SW-PA-04006000-33C

Place of Origin:China

...RF Power Amplifier for Electronic Warfare The 400-6000MHz 2W RF power amplifier is a high-performance, medium-power device suitable for various RF and wireless communication applications. Key features include: Wide Frequency Range: Covers 400MHz to 6000MHz, suitable for diverse communication and testing scenarios. 2W Output Power...

Brand Name:Infineon / CYPRESS

Model Number:CYW20736A1KML2GT

Place of Origin:original

...RF Power Transistors High Performance Excellent Reliability Package 32-VFQFN Type TxRx + MCU RF Family/Standard Bluetooth Protocol Bluetooth v4.1 Frequency 2.4GHz Serial Interfaces I²C, SPI, UART GPIO 14 Voltage - Supply 1.4V ~ 3.6V Operating Temperature -30°C ~ 85°C Mounting Type Surface Mount Package / Case 32-VFQFN Exposed Pad Supplier Device Package 32-QFN (5x5) CYW20736A1KML2GT RF Power Transistor The CYW20736A1KML2GT RF

Brand Name:VBE

Place of Origin:CHINA

.... With high performance Spurious Suppression of ≤-60dBc, Gain Flatness of ≤±0.5dB, Noise Figure of 2.5dB, Gain of 30 To 40dB and Output Power of 10 To 20W, our RF Jammer Module will meet your different needs.

Brand Name:VBE

Place of Origin:CHINA

...used to suppress unwanted signals. This RF Jammer Module features a Noise Figure of 2.5dB, a size of 130*35*15mm, Spurious Suppression below -60dBc, and a Frequency Range of ...

Brand Name:Analog Devices Inc.

Model Number:HMC788ALP2ETR

Place of Origin:Multi-origin

... over the 0.5 to 2.7GHz frequency range with a maximum output power of 50W. The device offers an extremely wide instantaneous bandwidth, high efficiency, and excellent linearity performance. Features: • Power Gain of 27dB • Maximum Output Power of

Brand Name:VBE

Model Number:VBP400M

Place of Origin:China

P-Band RF Power Amplifier PA , RF Power Amplifier Module Technical Specifications: NO. Item Description Min Typical Max Unit 1 Frequency Band 380 400 MHz 2 RF Output Power(1dB Compression Point ) VBP400M25 VBP400M80 VBP400M150 VBP400M300 43 44 48 49 50.8 ...

Brand Name:VBE

Model Number:VBP06-09M80

Place of Origin:China

L-Band RF Power Amplifier PA , RF Power Amplifier Module Technical Specifications: Item Description Min Typical Max Unit Frequency Band 1000 2000 MHz RF Output Power (1dB Compression Point ) VBP06-09M80 VBP13-18M10 VBP14-16M50 VBP10-13M80 49 40 47 49 ...