program flash memory

Brand Name:Winbond

Model Number:W25Q64JVXGIQ

Place of Origin:CN

... functionality High Performance: 133MHz clock speed with 266/532MHz equivalent Dual/Quad SPI Endurance: Minimum 100K program-erase cycles per sector Data Retention: Over 20 years Low Power Operation:

Brand Name:Anterwell

Model Number:AT29C256-70PC

Place of Origin:original factory

...Programming IC Chips 256K 32K X 8 5 Volt Only Cmos Flash Memory AT29C256 256K (32K x 8) 5-volt Only Flash Memory AT29C256 Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Page Program Operation – Single Cycle Reprogram (Erase and Program) – Internal Address and Data Latches for 64 Bytes • Internal Program Control and Timer • Hardware and Software Data Protection • Fast Program Cycle Times – Page (64 Byte) Program

Brand Name:PUYA

Model Number:P25Q16SH-SSH-IT

Place of Origin:CN

..., Erase and Program X1, X2 and X4 Multi I/O, QPI, DTR Support High reliability with 100K cycling and 20 Year-retention 1 Overview ...

Place of Origin:PHILIPPINE

Brand Name:ATMEL

Model Number:AM29F800BB-70SE

...Flash Memory Description: The Am29F800B is an 8 Mbit, 5.0 volt-only Flashmemory organized as 1,048,576 bytes or 524,288words. The device is offered in 44-pin SO and 48-pinTSOP packages. The word-wide data (x16) appears onDQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed...

Brand Name:Original Factory

Model Number:MT25QU01GBBB8E12-0AAT

Place of Origin:CN

...Flash Memory Chip​ Product Description Of MT25QU01GBBB8E12-0AAT MT25QU01GBBB8E12-0AAT is 1Gbit Serial NOR Flash Memory Chip, high-performance, dual and quad input/output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Specification Of MT25QU01GBBB8E12-0AAT Part Number: MT25QU01GBBB8E12-0AAT Series: MT25QU Product Category: NOR Flash Memory

Brand Name:Microchip

Model Number:PIC12F615

Place of Origin:Original & New

PIC12F615 MCU Chips SOP8 PIC12F615-ISN 8 Bit Flash Programmable Memory Chip Device Program Memory Data Memory Self Read/ Self Write I/O 10-bit A/D (ch) Comparators ECCP Timers 8/16-bit Voltage Range Flash (words) SRAM (bytes) PIC12F609 1024 64 — 5 0 1 — ...

Brand Name:Microchip Technology / Atmel

Model Number:AT89S52-24PU

Place of Origin:Original

... non-volatile memory technology and is compatible with the industry-standard 80C51 instruction set and pin-out. The on-chip flash allows the program memory to be reprogrammed in-system or by a conventional non-volatile memory programmer. By combining a

Brand Name:micron

Model Number:MT29F1G08ABAEAWP:E

Place of Origin:CN

...Flash Memory 8Gb NAND Flash Memory supporting single-programming operation with high reliability and data retention capability. Operating voltage: 2.7V~3.6V, 200µs parallel interface. Compatible Models MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4, MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC Key Features Open NAND Flash...

Brand Name:micron

Model Number:MT25QL256ABA8ESF-0SIT

Place of Origin:CN

...FLASH Memory 256Mb 3V Multiple I/O Serial Flash Memory with 133MHz clock frequency and 120us access time Key Features SPI-compatible serial bus interface Single and double transfer rate (STR/DTR) operation 133 MHz maximum clock frequency (STR), 90 MHz (DTR) Dual/quad I/O commands for throughput up to 90 MB/s Execute-in-place (XIP) capability Program...

Brand Name:Original Factory

Model Number:MT25QL02GCBB8E12-0AUT

Place of Origin:CN

... Flash memory device. High-performance, dual and quad input/output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Specification Of MT25QL02GCBB8E12-0AUT Part Number: MT25QL02GCBB8E12-0AUT Organization: 256M x 8

Brand Name:Original Factory

Model Number:S70GL02GS11FHI010

Place of Origin:CN

... with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation,

Brand Name:Original Factory

Model Number:MT29F4G08ABAFAH4-IT:F

Place of Origin:CN

... a cost-effective solution for applications requiring highdensity solid-state storage. Specification Of MT29F4G08ABAFAH4-IT:F Part Number: MT29F4G08ABAFAH4-IT:F Memory Interface: Parallel Random read: 25µs Page program: 300µs (TYP) Erase Block: 2ms (TYP)

Brand Name:Original Factory

Model Number:MT28EW256ABA1LPC-0SIT

Place of Origin:CN

...Flash Memory IC MT28EW256ABA1LPC-0SIT Integrated Circuit Chip 64-LBGA​ Product Description Of MT28EW256ABA1LPC-0SIT MT28EW256ABA1LPC-0SIT is an asynchronous, uniform block, parallel NOR Flash memory device. READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode. Specification Of MT28EW256ABA1LPC-0SIT Part Number: MT28EW256ABA1LPC-0SIT Memory

Brand Name:Original Factory

Model Number:GD25B256DFIGY

Place of Origin:CN

Memory IC Chip GD25B256DFIGY 3.3V Uniform Sector Dual And Quad Serial Flash Memory​ Product Description Of GD25B256DFIGY GD25B256DFIGY is 3.3V Uniform Sector Dual and Quad Serial Flash. It features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#), Serial Data Input (SI) and Serial Data Output (SO). Features Of GD25B256DFIGY Cycling Endurance and Data Retention Minimum 100,000 Program...

Brand Name:Original Factory

Model Number:S29GL256S10DHB023

Place of Origin:CN

... random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in

Brand Name:Original Factory

Model Number:S29GL01GS10FHI010

Place of Origin:CN

... access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one

Brand Name:Original Factory

Model Number:W25Q32JVSSIQ

Place of Origin:CN

... with current consumption as low as 1µA for power-down. W25Q32JVSSIQ array is organized into 16,384 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase),

Brand Name:ICMAX

Model Number:IMD64M16R38AG8GNF

Place of Origin:CN

...offered in 3.3v vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64Byte) page and an erase operation can be performed in typical 4.5ms on a

Brand Name:Anterwell

Model Number:M29W640FB

Place of Origin:original factory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7

Brand Name:Microchip Technology

Model Number:ATXMEGA64A3U-AU

Place of Origin:TAIWAN

...32MHz 64KB (32K x 16) FLASH 64-TQFP (14x14) Features • High-performance, low-power Atmel® AVR® XMEGA® 8/16-bit Microcontroller • Nonvolatile program and data memories ̶ 64K - 256KBytes of in-system self-programmable flash ̶ 4K - 8KBytes boot ...