ram random access memory

Brand Name:Winbond Electronics

Model Number:W25Q128JWSIQ

Place of Origin:Multi-origin

Product Listing: W25Q128JWSIQ Flash Memory Chips Specifications: • Capacity: 128Mb (16Mb x 8) • Voltage: 2.7V - 3.6V • Interface: SPI • Read Speed: 80MHz • Write Speed: 40MHz • Data retention: 20 years • Erase/Program Cycles: 10,000 • Operating Temperature...

Brand Name:Original Factory

Model Number:CY7C1441KV33-133AXI

Place of Origin:CN

...Memory IC 36Mbit Parallel 133MHz Product Description Of CY7C1441KV33-133AXI The CY7C1441KV33-133AXI are 3.3 V, 1M × 36 synchronous flow-through SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). Specification Of CY7C1441KV33-133AXI Part Number CY7C1441KV33-133AXI Memory Type Volatile Memory

Brand Name:Original Factory

Model Number:S80KS2562GABHA020

Place of Origin:CN

... expansion memory for scratchpad or buffering purposes. Specification Of S80KS2562GABHA020 Part Number: S80KS2562GABHA020 Technology: PSRAM (Pseudo SRAM) Memory Type: Volatile Product Status: Active Access Time: 35 Ns Product Type: DRAM Features Of

Brand Name:Original Factory

Model Number:S80KS5123GABHM023

Place of Origin:CN

...Memory Chips S80KS5123GABHM023 24-FBGA Integrated Circuit Chip 200MHz​ Product Description Of S80KS5123GABHM023 S80KS5123GABHM023 The host must confine the duration of transactions and allow additional initial access latency, at the beginning of a new transaction, if the memory indicates a refresh operation is needed. Specification Of S80KS5123GABHM023 Part Number S80KS5123GABHM023 Memory...

Brand Name:Original Factory

Model Number:S70KS1282GABHI023

Place of Origin:CN

...Memory Chips 24-VBGA Pseudo SRAM Memory​ Product Description Of S70KS1282GABHI023 S70KS1282GABHI023 is 128 Mb HYPERRAM™ self-refresh DRAM(PSRAM) Memory . Specification Of S70KS1282GABHI023 Parametrics S70KS1282GABHI023 Density 128 MBit Family KS-2 Initial Access...

Brand Name:Original Factory

Model Number:S26KS512SDPBHA020

Place of Origin:CN

512Mbit Memory IC S26KS512SDPBHA020 NOR Flash Memory Chip 24-FBGA 166MHz Parallel​​ Product Description Of S26KS512SDPBHA020 S26KS512SDPBHA020 During wrapped operation, accesses start at a selected location and continue for a configured number of locations...

Brand Name:Original Factory

Model Number:MT25QU128ABB8ESF-0AUT

Place of Origin:CN

...Memory MT25QU128ABB8ESF-0AUT Integrated Circuit Chip 16-SOIC​​ Product Description Of MT25QU128ABB8ESF-0AUT MT25QU128ABB8ESF-0AUT is Serial NOR Flash Memory Chip, It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Specification Of MT25QU128ABB8ESF-0AUT Part Number: MT25QU128ABB8ESF-0AUT Series: MT25QU Memory...

Brand Name:Original Factory

Model Number:MT25QU128ABB1ESE-0AUT

Place of Origin:CN

Memory Chips MT25QU128ABB1ESE-0AUT 166MHz Serial NOR Flash Memory IC 8-SOIC​ Product Description Of MT25QU128ABB1ESE-0AUT MT25QU128ABB1ESE-0AUT features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access...

Brand Name:Original Factory

Model Number:MT29F2G08ABBGAH4-AAT:G

Place of Origin:CN

...Memory Chips​ Product Description Of MT29F2G08ABBGAH4-AAT:G MT29F2G08ABBGAH4-AAT:G is 2Gbit Parallel Asynchronous NAND Flash Memory Chips. Specification Of MT29F2G08ABBGAH4-AAT:G Part Number MT29F2G08ABBGAH4-AAT:G Chipset Validation N/A Density 2Gb FBGA Code NX014 Op. Temp. -40C to +105C Features Of MT29F2G08ABBGAH4-AAT:G Memory Interface: Parallel Access...

Brand Name:YAGEO

Model Number:AC0402KRX7R9BB102

Place of Origin:USA

...n when the power is turned off. This chip is designed to operate at high speed, with a maximum access time of 50ns. It requires 2.7 V to 3.6 V of voltage supply and is designed for surface mount. This chip has a memory capacity of 4Mbit and organization of

Brand Name:Original Factory

Model Number:MT62F1G64D8WT-031 AV XT:B

Place of Origin:CN

Memory IC Chip MT62F1G64D8WT-031 AV XT:B Low-Power DRAM LPDDR5 64G Memory IC Product Description Of MT62F1G64D8WT-031 AV XT:B MT62F1G64D8WT-031 AV XT:B addresses these requirements with a 50% increase in data access speeds. The devices also have more than ...

Brand Name:Microchip Technology

Model Number:AT29C040A-90TU

...Memory Memory Mfr Microchip Technology Series - Package Tray Product Status Obsolete Memory Type Non-Volatile Memory Format FLASH Technology FLASH Memory Size 4Mbit Memory Organization 512K x 8 Memory Interface Parallel Write Cycle Time - Word, Page 10ms Access...

Brand Name:Infineon

Model Number:S29GL01GT11FHIV10

...Memory Memory Mfr Infineon Technologies Series GL-T Package Tray Product Status Active Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 1Gbit Memory Organization 128M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 60ns Access...

Model Number:S29AL008J70TFI010

Brand Name:CYPRESS

... Memory Format FLASH Technology FLASH - NOR Memory Size 8Mbit Memory Organization 1M x 8, 512K x 16 Memory Interface Parallel Write Cycle Time - Word, Page 70ns Access Time 70 ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA)

Brand Name:ISSI

Model Number:IS61WV204816BLL-10TLI

... Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 32Mbit Memory Organization 2M x 16 Memory Interface Parallel Write Cycle Time - Word, Page 10ns Access Time 10 ns Voltage - Supply 2.4V ~ 3.6V Operating Temperature -40°C ~ 85°C

Brand Name:Infineon Technologies

Model Number:CY7C1380D-167AXI

... SRAM Technology SRAM - Synchronous, SDR Memory Size 18Mbit Memory Organization 512K x 36 Memory Interface Parallel Clock Frequency 167 MHz Write Cycle Time - Word, Page - Access Time 3.4 ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature -40°C ~

Brand Name:Infineon Technologies

Model Number:S29AL016J55TFNR20

...Memory Memory Mfr Infineon Technologies Series AL-J Package Tray Product Status Active Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 16Mbit Memory Organization 2M x 8, 1M x 16 Memory Interface Parallel Write Cycle Time - Word, Page 55ns Access ...

Brand Name:Samsung

Model Number:K4A4G165WF-BCTD

Place of Origin:TH/CN/PH

... cells, address decoders, and sense amplifiers. Memory IC common features include: - Memory capacity: This refers to the amount of data that the Memory IC can store. Higher memory capacity values mean more data can be stored. - Access time: This refers to

Brand Name:FUJITSU

Model Number:MB85RC16PNF-G-JNERE1

Place of Origin:JP

... cells, address decoders, and sense amplifiers. Memory IC common features include: - Memory capacity: This refers to the amount of data that the Memory IC can store. Higher memory capacity values mean more data can be stored. - Access time: This refers to