random access analyzer

Brand Name:MOTOROLA

Model Number:MC68HC811E2P

Place of Origin:Original

... unit (CPU) with high-performance, on-chip peripherals. The E series is comprised of many devices with various configurations of: • Random-access memory (RAM) • Read-only memory (ROM) • Erasable programmable read-only memory (EPROM) • Electricall

Brand Name:Allen Bradley

Model Number:2711P-RP8A

Place of Origin:USA

... Plus 6 operator terminals. This logic module is compatible for PanelView Plus 6 700-1500 operator terminals. It has a Random Access Memory (RAM) amounting to 512 MB and Flash memory amounting to 512 MB. This logic module has One (1) serial, Two (2) USB

Brand Name:Macronix

Model Number:MX29GL320EHT2I-70G

.... MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F080 is packaged in 40-pin TSOP or 44-pin SOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. ...

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS42S32800J-7BLI

... and outputs signals refer to the rising edge of the clock input. GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS42S16400J-7TL

Product Details Description The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit...

Brand Name:Micron Technology Inc.

Model Number:MT48LC16M16A2P-6A:G TR

Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive ...

Brand Name:Micron Technology Inc.

Model Number:MT48LC16M16A2B4-7E IT:G

Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the ...

Brand Name:Infineon Technologies

Model Number:FM24CL16B-GTR

...ails Description The FM24CL16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for ...

Brand Name:Winbond Electronics

Model Number:W949D6DBHX5I

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers...

Brand Name:Winbond Electronics

Model Number:W949D2DBJX5I

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers...

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16CY-5B IT:M

Product Details GENERAL DESCRIPTION The DDR333 SDRAM is a high-speed CMOS, dy namic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 continues to use the JEDEC standard SSTL_2 ...

Brand Name:Alliance Memory, Inc.

Model Number:AS4C2M32SA-6TCN

Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with ...

Brand Name:Macronix

Model Number:MX29GL256FHXFI-90Q

.... MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F080 is packaged in 40-pin TSOP or 44-pin SOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. ...

Brand Name:Winbond Electronics

Model Number:W9812G6KH-6

Product Details Description W9812G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words x 4 banks x 16 bits. W9812G6KH delivers a data bandwidth of up to 200M words per second. To fully comply with the personal ...

Brand Name:Winbond Electronics

Model Number:W9464G6KH-5

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers...

Brand Name:Original Factory

Model Number:W9825G6KH-6I

Place of Origin:CN

... SDRAM Memory IC 54-TSOP​ Product Description Of W9825G6KH-6I W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second. ...

Categories:FPGA Configuration and Control Memory

Country/Region:china

... ferroelectric random access memory (F-RAM) with an I²C interface, manufactured by Infineon Technologies. It offers high endurance, fast write speeds, and low power consumption, ...

Brand Name:Original Factory

Model Number:MT53E2G32D4DT-046 WT:A

Place of Origin:CN

... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory ...

Brand Name:Original Factory

Model Number:MT53E384M32D2FW-046 WT:E

Place of Origin:CN

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% ...

Brand Name:Original Factory

Model Number:MT53E256M32D2DS-053 WT:B

Place of Origin:CN

... Memory Chips. The 8Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Each of the x16’s 536,870,912-bit banks is organized as 32,768 ...