random access memory price

Brand Name:Infineon / CYPRESS

Model Number:S29GL512T10FHI010

Place of Origin:original

...Memory Chips 64-LBGA Package 1 Gb 512Mb (64 MB) MIRRORBIT™ Flash Parallel 3.0V Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 512Mbit Memory Organization 64M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 60ns Access...

Brand Name:Infineon / CYPRESS

Model Number:S29GL01GS10TFI020

Place of Origin:original

... Memory Chips 56-TFSOP Package GL-S MIRRORBIT™ Flash Parallel 3.0V 1Gb Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 1Gbit Memory Organization 64M x 16 Memory Interface Parallel Write Cycle Time - Word, Page 60ns Access ...

Brand Name:Infineon / CYPRESS

Model Number:CY7C1061G30-10ZSXI

Place of Origin:original

... Parallel Write Cycle Time - Word, Page 10ns Access Time 10 ns Voltage - Supply 2.2V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface ...

Brand Name:Infineon / CYPRESS

Model Number:CY7C1071DV33-12BAXI

Place of Origin:original

...Memory Chips 48-TFBGA Package Static RAM high performance CMOS Static RAM 32Mbit Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 32Mbit Memory Organization 2M x 16 Memory Interface Parallel Write Cycle Time - Word, Page 12ns Access...

Brand Name:Infineon / CYPRESS

Model Number:CY7C1021DV33-10ZSXI

Place of Origin:original

...-10ZSXI Flash Memory Chips 44-TSOP Package 1Mbit Static RAM Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mbit Memory Organization 64K x 16 Memory Interface Parallel Write Cycle Time - Word, Page 10ns Access Time 10 ...

Brand Name:Infineon / CYPRESS

Model Number:CY7C109D-10VXI

Place of Origin:original

...Flash Memory Chips 32-BSOJ Package High Performance CMOS Static RAM Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mbit Memory Organization 128K x 8 Memory Interface Parallel Write Cycle Time - Word, Page 10ns Access ...

Brand Name:Infineon / CYPRESS

Model Number:S29GL128S10TFI010

Place of Origin:original

... Flash Memory Chips 56-TFSOP Package Feature A Write Buffer Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 128Mbit Memory Organization 8M x 16 Memory Interface Parallel Write Cycle Time - Word, Page 60ns Access Time ...

Brand Name:Micron Technology Inc.

Model Number:MT46H16M32LFBQ-5 AAT:C

Place of Origin:Multi-origin

...Memory Chips Product Number: MT46H16M32LFBQ-5 AAT:C Product Parameters: - Capacity: 16Mbit (2M x 8/ 1M x 16) - Clock Frequency: Max. 66MHz - Operating Voltage: 1.8V(1.7V - 1.95V) - Single Power Supply - Access Time: 5ns - Package: 32-pin TSOP-I Type Product Status Active Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR Memory Size 512Mbit Memory Organization 16M x 32 Memory...

Brand Name:Micron Technology Inc.

Model Number:MT48LC4M16A2P-6A:J

Place of Origin:Multi-origin

...Memory Chips Product Features: - 4M x 16 bit organization - Single power supply operation - 2.7V to 3.6V - Fast page access time - Low power consumption - Fast write cycle time - Data retention up to 10 years - Packaged in 48-pin TSOP-II Product Status Active Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 64Mbit Memory Organization 4M x 16 Memory...

Brand Name:Micron Technology Inc.

Model Number:MT40A1G16RC-062E IT:B

Place of Origin:Multi-origin

...Memory Chips Parameters: - Capacity: 1GB (1,024Mb) - Organization: x16 - Speed: 633Mb/s (62.5MHz) - Voltage: 2.5/3.3V - Operating Temperature: 0°C to +70°C - Package: 80-ball BGA Product Status Obsolete Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR4 Memory Size 16Gbit Memory Organization 1G x 16 Memory Interface Parallel Clock Frequency 1.6 GHz Write Cycle Time - Word, Page 15ns Access

Brand Name:Infineon / CYPRESS

Model Number:S29AL008J70TFI010

Place of Origin:original

... Memory Chips 8-WDFN Package Common flash interface (CFI) data Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 8Mbit Memory Organization 1M x 8, 512K x 16 Memory Interface Parallel Write Cycle Time - Word, Page 70ns Access ...

Brand Name:Winbond Electronics

Model Number:W9712G6KB25I

Place of Origin:original

...Memory Chips Ideal For High Performance Storage Solutions Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 128Mbit Memory Organization 8M x 16 Memory Interface Parallel Clock Frequency 200 MHz Write Cycle Time - Word, Page 15ns Access...

Brand Name:Winbond Electronics

Model Number:W632GG6KB-15

Place of Origin:original

... Flash Memory Chips Fast and Reliable Data Storage Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3 Memory Size 2Gbit Memory Organization 128M x 16 Memory Interface Parallel Clock Frequency 667 MHz Write Cycle Time - Word, Page - Access Time...

Brand Name:Winbond Electronics

Model Number:W9751G6KB25I

Place of Origin:original

... Flash Memory Chips for Data Storage Solutions Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 512Mbit Memory Organization 32M x 16 Memory Interface Parallel Clock Frequency 400 MHz Write Cycle Time - Word, Page 15ns Access Time...

Brand Name:Winbond Electronics

Model Number:W631GG8KB-15

Place of Origin:original

... Write Cycle Time - Word, Page - Access Time 20 ns Voltage - Supply 1.425V ~ 1.575V Operating Temperature 0°C ~ 95°C (TC) Mounting Type Surface Mount ...

Brand Name:Micron Technology Inc.

Model Number:MT47H64M16HR-25E IT:H

Place of Origin:original

... Memory Chip High Performance Of Storage Capacity​ Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 1Gbit Memory Organization 64M x 16 Memory Interface Parallel Clock Frequency 400 MHz Write Cycle Time - Word, Page 15ns Access ...

Brand Name:Original Factory

Model Number:S70KS1282GABHA023

Place of Origin:CN

Memory IC Chip S70KS1282GABHA023 200MHz Pseudo SRAM Memory IC 24-FBGA​ Product Description Of S70KS1282GABHA023 S70KS1282GABHA023 The DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as pseudo static RAM (PSRAM). Specification Of S70KS1282GABHA023 Part Number S70KS1282GABHA023 Density 128 MBit Family KS-2 Initial Access Time 35 ns Memory

Brand Name:JUNSON

Model Number:JS- 8810T

Place of Origin:China

....The users can set a person can pass some part of doors, or a person can pass all the doors. Setting results can be arranged according to the door or the people. Description : The access time zone of one door could have 16 groups, and it can be

Brand Name:ICT

Model Number:PA7540P-15

Place of Origin:Malaysia

...Memory Chip PEEL Array™ Programmable Electrically Erasable Logic Array Most Powerful 24-pin PLD Available - 20 I/Os, 2 inputs/clocks, 40 registers/latches - 40 logic cell output functions - PLA structure with true product-term sharing - Logic functions and registers can be I/O-buried Ideal for Combinatorial, Synchronous and Asynchronous Logic Applications - Integration of multiple PLDs and random...