rectifier device

Brand Name:Texas Instruments

Model Number:TPS63051RMWT

Place of Origin:Multi-origin

...combines a low-RDS(on) synchronous rectifier FET, a wide input voltage range, and a high-efficiency, high-voltage buck converter in a single package. This device is ideal for supplying high-performance microprocessors and FPGAs in space-constrained applications. Features...

Brand Name:SAILRAY

Model Number:XD3-3.5/100

Place of Origin:CHINA

Digital Medical Device Stationary Anode Tube Insertion for Diagnostic X-ray System Description: This tube, XD3-3.5/100 is designed for general diagnostic x-ray unit and available for a nominal tube voltage with self-rectified circuit. XD3-3.5/100 tube has ...

Brand Name:Infineon

Model Number:IRFR5305TRPBF

Place of Origin:Original Factory

... techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and

Model Number:IRF7311TRPBF

Place of Origin:original factory

...International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for...

Brand Name:IRF

Model Number:IRF3205

Place of Origin:Original

... Rated Desc Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device

Model Number:IRF3205PBF

Place of Origin:original factory

...Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well

Model Number:IRF1010EPBF

Place of Origin:original factory

... Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that

Model Number:IRFZ34NPBF

Place of Origin:original factory

... Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that

Model Number:IRFP044N

Place of Origin:original factory

... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Model Number:IRLL024NTRPBF

Place of Origin:original factory

... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:ETOPMAY

Model Number:TMCC02

Place of Origin:China

...integrated voltage doubler integrated rectifier module, which is part of the entire circuit integrated in a device, because of its integrated structure, so it is not subject to vibration, humidity, gas corrosion, not afraid of dust, oil Baptist, can work

Brand Name:ETOPMAY

Model Number:TMCC02

Place of Origin:China

... integrated rectifier module, which is part of the entire circuit integrated in a device, because of its integrated structure, so it is not subject to vibration, humidity, gas corrosion, not afraid of dust, oil Baptist, can work in harsh environments.

Model Number:IRF7601PBF

Place of Origin:original factory

... Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET

Model Number:IRFR9120N

Place of Origin:original factory

... Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Japan

...Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are

Brand Name:IRF

Model Number:IRF7424TRPBF

Place of Origin:original factory

... Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

... Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides...

Model Number:S6025L

Place of Origin:original factory

... offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If gate currents in the 12 µA to 500 µA ranges are ...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AOD4454

Place of Origin:CHINA

... low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...