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All single parallel absolute position encoder wholesalers & single parallel absolute position encoder manufacturers come from members. We doesn't provide single parallel absolute position encoder products or service, please contact them directly and verify their companies info carefully.
| Total 1090 products from single parallel absolute position encoder Manufactures & Suppliers |
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Model Number:APT50GT120B2RG-HXY Product Overview The APT50GT120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Industrial IGBT Infineon IKWH70N65WR6 with trenchstop 5 WR6 technology and enhanced creepage packageModel Number:IKWH70N65WR6 Product Overview The TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. This IGBT is optimized for PFC and welding applications, featuring stable temperature behavior, very ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:APT35GP120BG-HXY Product Overview The APT35GP120BG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:IXXX160N65C4-HXY Product Overview The IXXX160N65C4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:IXGH40N120B2D1-HXY Product Overview The IXGH40N120B2D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:IXYH40N120B3D1-HXY Product Overview The IXYH40N120B3D1 is a 1200V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:IGW50N65F5-HXY Product Overview The HXY IGW50N65F5 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:IXYH100N65C3-HXY Product Overview The IXYH100N65C3 is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:APT50GR120B2-HXY Product Overview The APT50GR120B2 is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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1200V 50A IGBT Power Transistor for UPS EV Chargers Solar Inverters HXY MOSFET APT50GT120B2RDQ2G-HXYModel Number:APT50GT120B2RDQ2G-HXY Product Overview The APT50GT120B2RDQ2G is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:IRGP4263-EPBF-HXY Product Overview The IRGP4263-EPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:IGW40N60TP-HXY Product Overview The IGW40N60TP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in Vcesat, low EMI, low gate charge, and low ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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High Current Capability HXY MOSFET AOKS40B65H1 with Maximum Junction Temperature of 175C and Low EMIModel Number:AOKS40B65H1 Product Overview The AOKS40B65H1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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HXY MOSFET APT68GA60B-HXY Featuring TO-247 Package and High Collector Current for Power ApplicationsModel Number:APT68GA60B-HXY Product Overview The APT68GA60B is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:AIGW50N65H5-HXY AIGW50N65H5 Insulated Gate Bipolar Transistor The AIGW50N65H5 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:IGW40N120H3-HXY Product Overview The IGW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:IHW30N135R5-HXY Product Overview The IHW30N135R5 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Durable power device HXY MOSFET FGH40T65SHD-F155-HXY optimized for EV charger solar inverter and UPSModel Number:FGH40T65SHD-F155-HXY Product Overview The FGH40T65SHD-F155 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:NGTB40N65FL2WG-HXY Product Overview The NGTB40N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Model Number:STGWA50M65DF2-HXY Product Overview The STGWA50M65DF2 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge... |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
