static random access memory

Brand Name:Original Factory

Model Number:MT41K256M16TW-107 XIT:P

Place of Origin:CN

.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C (TC) Applications Of MT41K256M16TW-107 ...

Brand Name:Original Factory

Model Number:MT46H16M32LFB5-6 AIT:C

Place of Origin:CN

... CMOS dynamic random access memory containing 536,870,912 bits. It is configured internally as four sets of DRAM. Specification Of MT46H16M32LFB5-6 AIT:C Organisation: 16 M x 32 Access Time: 5 ns Supply Voltage - Min: 1.7 V Supply Voltage - Max: 1.95 V

Brand Name:Original Factory

Model Number:MT41K128M16JT-125 IT:K

Place of Origin:CN

...Memory IC Chip 2Gbit DDR3L SDRAM Memory Chip FBGA96 Product Description Of MT41K128M16JT-125 IT:K MT41K128M16JT-125 IT:K is a 2Gbit capacity DDR3L Synchronous Dynamic Random‑Access Memory (SDRAM) in an FBGA-96 package. Specification Of MT41K128M16JT-125 IT:K Type: SDRAM - DDR3L Memory Size: 2 Gbit Data Bus Width: 16 bit Maximum Clock Frequency: 800 MHz Package / Case: FBGA-96 Organization: 128 M x 16 Access...

Model Number:M29W640FB

Place of Origin:original factory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7

Brand Name:Original Factory

Model Number:CY15B102QN-50LHXI

Place of Origin:CN

...advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification Of CY15B102QN-50LHXI Part Number CY15B102QN-50LHXI Clock Frequency 50 MHz Access Time 8 ns Voltage -

Brand Name:NUMONYX

Model Number:M29W640GT70NA6E

Place of Origin:Original

... – Page Width: 4 words – Page Access: 25 ns – Random Access: 60 ns, 70 ns, 90 ns ■ Fast Program commands – 2 word/4 byte Program (without VPP=12 V) – 4 word/8 ...

Brand Name:Original Factory

Model Number:MT53E256M16D1FW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1FW-046 WT:B 4Gbit Parallel DRAM LPDDR4 Memory Chips​ Product Description Of MT53E256M16D1FW-046 WT:B MT53E256M16D1FW-046 WT:B is 4Gbit Parallel DRAM LPDDR4 Memory IC. It is a high-speed CMOS, dynamic random-access memory. Specification Of MT53E256M16D1FW-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4X Memory Size 4Gbit Memory Organization 256M x 16 Memory...

Brand Name:Original Factory

Model Number:W9825G6KH-6I

Place of Origin:CN

Memory IC Chip W9825G6KH-6I 256Mbit Parallel High Speed SDRAM Memory IC 54-TSOP​ Product Description Of W9825G6KH-6I W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second. Specification Of W9825G6KH-6I Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 256Mbit Memory Organization 16M x 16 Memory

Brand Name:Original Factory

Model Number:MT62F512M32D2DS-031 IT:B

Place of Origin:CN

Memory IC Chip MT62F512M32D2DS-031 IT:B 16Gbit Parallel LPDDR5 DRAM Memory Chip​ Product Description Of MT62F512M32D2DS-031 IT:B MT62F512M32D2DS-031 IT:B is 16Gbit Parallel LPDDR5 dynamic random-access memory. Specification Of MT62F512M32D2DS-031 IT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR5 Memory Size 16Gbit Memory Organization 512M x 32 Memory...

Brand Name:Original Factory

Model Number:MT62F1G32D4DS-031 WT:B

Place of Origin:CN

... Random Access Memory. Specification Of MT62F1G32D4DS-031 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR5 Memory Size 32Gbit Memory Organization 1G x 32 Memory Interface Parallel Clock Frequency 3.2 GHz Voltage - Supply 1

Brand Name:Original Factory

Model Number:MT53E256M16D1DS-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1DS-046 WT:B 4Gbit SDRAM Mobile LPDDR4 Memory IC VFBGA-200​ Product Description Of MT53E256M16D1DS-046 WT:B MT53E256M16D1DS-046 WT:B is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Specification Of MT53E256M16D1DS-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory Size 4Gbit Memory...

Brand Name:Original Factory

Model Number:MT62F1536M64D8EK-023 WT:C

Place of Origin:CN

Memory IC Chip MT62F1536M64D8EK-023 WT:C 96Gbit LVSTL LPDDR5X Memory IC​ TFBGA-441​ Product Description Of MT62F1536M64D8EK-023 WT:C MT62F1536M64D8EK-023 WT:C is 96Gbit LVSTL LPDDR5X Synchronous Dynamic Random Access Memory (SDRAM). Specification Of MT62F1536M64D8EK-023 WT:C Memory Format DRAM Technology SDRAM - Mobile LPDDR5X Memory Size 96Gbit Memory Organization 1.5G x 64 Memory...

Brand Name:Original Factory

Model Number:MT53E384M32D2DS-053 AUT:E

Place of Origin:CN

Memory IC Chip MT53E384M32D2DS-053 AUT:E 12Gbit 1.866 GHz LPDDR4 Memory Product Description Of MT53E384M32D2DS-053 AUT:E MT53E384M32D2DS-053 AUT:E 12Gb Low Power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. Specification Of MT53E384M32D2DS-053 AUT:E Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory Size 12Gbit Memory...

Brand Name:Original Factory

Model Number:MT62F3G32D8DV-023 AIT:C

Place of Origin:CN

Memory IC Chip MT62F3G32D8DV-023 AIT:C 96Gbit Automotive LPDDR5 Memory IC LFBGA-315​ Product Description Of MT62F3G32D8DV-023 AIT:C MT62F3G32D8DV-023 AIT:C is 96Gbit Automotive LPDDR5 Synchronous Dynamic Random Access Memory (SDRAM) IC for Mobile Devices and Artificial Intelligence (AI). Specification Of MT62F3G32D8DV-023 AIT:C Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR5X Memory Size 96Gbit Memory...

Brand Name:Original Factory

Model Number:MT62F512M32D2DS-031 AAT:B

Place of Origin:CN

Memory IC Chip MT62F512M32D2DS-031 AAT:B 16Gbit Parallel LPDDR5 Memory WFBGA-200​ Product Description Of MT62F512M32D2DS-031 AAT:B MT62F512M32D2DS-031 AAT:B is 16Gbit Automotive LPDDR5 Synchronous Dynamic Random Access Memory (SDRAM) for Mobile Devices and Artificial Intelligence (AI). Specification Of MT62F512M32D2DS-031 AAT:B Memory Format DRAM Technology SDRAM - Mobile LPDDR5 Memory Size 16Gbit Memory Organization 512M x 32 Memory...

Brand Name:Original Factory

Model Number:MT62F768M64D4EK-026 WT:C

Place of Origin:CN

Memory IC Chip MT62F768M64D4EK-026 WT:C 48Gbit LPDDR5 SDRAM Memory IC TFBGA-441​ Product Description Of MT62F768M64D4EK-026 WT:C MT62F768M64D4EK-026 WT:C is 3.75GHz, 48Gbit Automotive LPDDR5 Synchronous Dynamic Random Access Memory with LVSTL Interface. Specification Of MT62F768M64D4EK-026 WT:C Memory Format DRAM Technology SDRAM - Mobile LPDDR5X Memory Size 48Gbit Memory Organization 768M x 64 Memory...

Brand Name:Original Factory

Model Number:MT41K256M16TW-107:P

Place of Origin:CN

...Memory IC Chip 4Gbit DDR3L SDRAM Memory Chip FBGA96​ Product Description Of MT41K256M16TW-107:P MT41K256M16TW-107:P is a 4Gbit, DDR3L Synchronous Dynamic Random Access Memory (SDRAM) Chips, it is a low voltage version of the DDR3 (1.5V) SDRAM. Specification Of MT41K256M16TW-107:P Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gbit Memory Organization 256M x 16 Memory...

Brand Name:Original Factory

Model Number:MT53E256M32D2FW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2FW-046 WT:B 8Gbit Parallel LPDDR4X Memory IC VFBGA-200​ Product Description Of MT53E256M32D2FW-046 WT:B MT53E256M32D2FW-046 WT:B is 8Gbit Parallel SDRAM - Mobile LPDDR4X Memory IC. The 8Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Specification Of MT53E256M32D2FW-046 WT:B Memory Type Volatile Memory

Brand Name:Original Factory

Model Number:MT53E1536M32D4DE-046 WT:B

Place of Origin:CN

... random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory is suitable for

Brand Name:Original Factory

Model Number:MT53E512M64D2NW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E512M64D2NW-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory