8g dynamic random access memory

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16P-5B:M

Place of Origin:original

... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ...

Brand Name:Original Factory

Model Number:H9HCNNNBKUMLHR-NMOR

Place of Origin:CN

H9HCNNNBKUMLHR-NMOR Memory IC Chip 2Gbit DRAM LPDDR4 Memory IC FBGA-200​ Product Description Of H9HCNNNBKUMLHR-NMOR H9HCNNNBKUMLHR-NMOR is LPDDR4 Dynamic Random Access Memory IC, 2GB Capacity, x16 Architecture, the package is FBGA-200​. Specification...

Brand Name:Hynix

Model Number:Hynix Memory IC

Place of Origin:South Korea, China

...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ...

Brand Name:Micron

Model Number:Micron Memory IC

Place of Origin:United States

Micron Memory IC Micron Memory IC Integrated Circuit Chips Electronics Components Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It...

Brand Name:Original Factory

Model Number:MT40A512M16LY-062E AUT:E

Place of Origin:CN

8Gbit Memory Chip MT40A512M16LY-062E AUT:E Integrated Circuit Chip 96FBGA IC Chip​ Product Description Of MT40A512M16LY-062E AUT:E MT40A512M16LY-062E AUT:E The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as an eight-bank...

Brand Name:Original Factory

Model Number:MT40A1G16KH-062E AIT:E

Place of Origin:CN

... Circuit Chip MT40A1G16KH-062E AIT:E 1.6 GHz DRAM DDR4 Memory IC Product Description Of MT40A1G16KH-062E AIT:E MT40A1G16KH-062E AIT:E is a high-speed dynamic random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16...

Brand Name:Alliance Memory, Inc.

Model Number:AS4C2M32SA-6TCN

Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with ...

Place of Origin:PHILIPPINE

Brand Name:Micron Technology

Model Number:MT4LC4M16R6TG-5

...high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,...

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Specification Of MT53E1G32D2NP-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory...

Place of Origin:PHILIPPINE

Brand Name:Qimonda AG

Model Number:HYB25DC512160DE-5

Quick Detail: 512-Mbit Double-Data-Rate SDRAM Description: The 512-Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512-Mbit Double-Data-Rate ...

Brand Name:Original Factory

Model Number:MT53E768M32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount Product Description Of MT53E768M32D2NP-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dynamic random access storage device. The memory device is optimized to solve power consumption problems in battery-powered applications. LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E2G32D4DT-046 WT:A

Place of Origin:CN

... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications, and ultra-portable devices. Specification Of

Brand Name:Original Factory

Model Number:MT53E768M64D4HJ-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC Product Description Of MT53E768M64D4HJ-046 WT:B MT53E768M64D4HJ-046 WT:B 48Gb low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device. Optimized to address power consumption in battery-powered applications, this memory...

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-053 RS WT:C

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. These memory...

Brand Name:Original Factory

Model Number:MT41K512M16VRN-107 IT:P

Place of Origin:CN

... dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. MT41K512M16VRN-107 IT:P Although each die is tested individually within the dual-die package, some ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C34098A-10JIN

...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C256B-15PIN

... data access, low power, and simple interfacing are desired. FEATURES • Organization: 32,768 words × 8 bits • High speed – 10/12/15/20/25/35 ns address access time – 3/3/4/5/6/8 ns output enable access time • Low power consumption – Active:

Brand Name:Alliance Memory, Inc.

Model Number:AS7C1024B-12TJCN

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications.

Brand Name:Alliance Memory, Inc.

Model Number:AS7C1024B-12JCN

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications.

Brand Name:Original Factory

Model Number:CY15B102QN-50LHXI

Place of Origin:CN

...advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification Of CY15B102QN-50LHXI Part Number CY15B102QN-50LHXI Clock Frequency 50 MHz Access Time 8 ns Voltage -