8g dynamic random access memory

Brand Name:Alliance Memory, Inc.

Model Number:AS7C316098A-10BIN

...memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C256A-10TCN

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C256A-12JCN

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C4096A-12JIN

... is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Pin ...

Model Number:M29W640FB

Place of Origin:original factory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7

Brand Name:Alliance Memory, Inc.

Model Number:AS6C4016-55ZIN

..., high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA(TYP.) Standby current : 4 µA(TYP.) Single 2....

Brand Name:NUMONYX

Model Number:M29W640GT70NA6E

Place of Origin:Original

... – Page Width: 4 words – Page Access: 25 ns – Random Access: 60 ns, 70 ns, 90 ns ■ Fast Program commands – 2 word/4 byte Program (without VPP=12 V) – 4 word/8 ...

Brand Name:CYPRESS

Model Number:FM24CL04B

Place of Origin:Original Factory

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ...

Brand Name:Anterwell

Model Number:A623308M-70SF

Place of Origin:original factory

...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three

Brand Name:Original Factory

Model Number:S70GL02GT12FHIV10

Place of Origin:CN

...Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount Product Description Of S70GL02GT12FHIV10 S70GL02GT12FHIV10 device is fabricated on 45-nm MIRRORBIT™ process technology.S70GL02GT12FHIV10 device offers a fast page access time of 20 ns with a corresponding random access time of 110 ns. Specification Of S70GL02GT12FHIV10 Part Number S70GL02GT12FHIV10 Memory Size 2Gbit Memory Organization 256M x 8, 128M x 16 Memory...

Brand Name:Original Factory

Model Number:S70GL02GS11FHI010

Place of Origin:CN

... on 65-nm MIRRORBIT™ process technology. The device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation,

Brand Name:original

Model Number:FM1608-120

Place of Origin:Original Factory

... - 64KB BYTEWIDE FRAM MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in ...

Brand Name:original

Model Number:FM24C256-SE

Place of Origin:original

... - 256KB FRAM SERIAL MEMORY Quick Detail: 256Kb FRAM Serial Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs ...

Brand Name:Original Factory

Model Number:CY15B104QI-20LPXC

Place of Origin:CN

4Mbit SPI 20 MHz Ferroelectric RAM Memory IC CY15B104QI-20LPXC Surface Mount Product Description Of CY15B104QI-20LPXC CY15B104QI-20LPXC ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification...

Brand Name:Original Factory

Model Number:S29GL256S90DHI020

Place of Origin:CN

...Memory IC FBGA64​ Product Description Of S29GL256S90DHI020 S29GL256S90DHI020 is MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. S29GL256S90DHI020 offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. Specification Of S29GL256S90DHI020 Part Number S29GL256S90DHI020 Memory Type Non-Volatile Memory...

Brand Name:Microchip Technology

Model Number:AT24CS08-STUM-T

Place of Origin:original

...Memory for High Performance Data Storage Product Description: The AT24CS08-STUM-T is a Flash Memory chip that provides 8-Kbit of memory in a small, low-power 8-pin package. It features an I2C® serial interface and is capable of storing up to 1024 bytes of data. The device is organized as 128 pages of 8 bytes each and can be accessed using the device’s random access...

Brand Name:Original Factory

Model Number:S29GL256S10DHB023

Place of Origin:CN

... technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, ...

Brand Name:Original Factory

Model Number:S29GL01GS10FHI010

Place of Origin:CN

... on 65-nm process technology. It offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one

Place of Origin:PHILIPPINE

Brand Name:Ramtron International Corporation

Model Number:FM24C256-SE

...Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories...

Place of Origin:PHILIPPINE

Brand Name:Advanced Micro Devices

Model Number:AM28F010-90PC

...memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The