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| Total 49633 products from single field effect transistor Manufactures & Suppliers |
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Place of Origin:Original SQJ488EP-T1_GE3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original TK8P60W5,RVQ Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 400µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original BUK9616-75B,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On,Min Rds On) 5V, 10V Vgs(th) (Max) @ Id 2V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STL55NH3LL Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 55A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 2.5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original DMP31D0U-7 Specifications Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 530mA (Ta) Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 1.1V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original RSU002P03T106 Specifications Part Status Not For New Designs FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 250mA (Ta) Drive Voltage (Max Rds On,Min Rds On) 4V, 10V Vgs(th) (Max... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original DMS3014SFG-7 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.5A (Ta) Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 2.2V... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original DMN601WKQ-7 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SI2304DDS-T1-GE3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.3A (Ta), 3.6A (Tc) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original ZVN3320A Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 3V @ 1mA Gate ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original CSD18541F5 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.2V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original CPH3350-TL-W Specifications Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id - Gate ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original DMG302PU-7 Specifications Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On,Min Rds On) 2.7V, 4.5V Vgs(th) (Max) @ Id 1.5V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SPU01N60C3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 800mA (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 3.9V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original BUK9606-55B,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On,Min Rds On) 5V, 10V Vgs(th) (Max) @ Id 2V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original MCH3474-TL-W Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 1.3V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original DMP2039UFDE-7 Specifications Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 6.7A (Ta) Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 1V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SQ2303ES-T1_GE3 Specifications Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original DMS3015SSS-13 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original DMN2005K-7 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max Rds On,Min Rds On) 1.8V, 2.7V Vgs(th) (Max) @ Id 900mV... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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