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| Total 49657 products from single field effect transistor Manufactures & Suppliers |
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Place of Origin:Original PSMN016-100PS,127 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 57A (Tj) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original PHB27NQ10T,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 28A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original PSMN017-30EL,127 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original TPH2R506PL,L1Q Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 500... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original IRFR9210PBF Specifications Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SIHJ6N65E-T1-GE3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 5.6A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STD5NM60T4 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 5V @ 250µA Gate ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original BUK664R4-55C,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On,Min Rds On) 5V, 10V Vgs(th) (Max) @ Id 2.8V... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original BUK7613-100E,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original BUK9611-80E,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On,Min Rds On) 5V Vgs(th) (Max) @ Id 2.1V @ 1mA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original BUK7640-100A,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 37A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STP75N3LLH6 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 2.5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STDLED625H Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 620V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4.5V @ 50µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STU150N3LLH6 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 2.5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original BUK9675-100A,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On,Min Rds On) 5V, 10V Vgs(th) (Max) @ Id 2V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original PSMN027-100BS,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 37A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original PSMN017-80BS,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original PSMN1R5-25YL,115 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original BUK6607-55C,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 2.8V @ 1mA... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SQJ422EP-T1_GE3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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