transistor application

Brand Name:Hua Xuan Yang

Model Number:5N20DY TO-252

Place of Origin:ShenZhen China

...Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet Power Transistor Application...

Brand Name:original

Model Number:TIP127

Place of Origin:original

...Transistors PNP Through Hole Power Darlington Low voltage complementary power Darlington transistors FEATURES • Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Application • General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors...

Brand Name:ON

Model Number:TIP31CG

Place of Origin:Original

... Gain − Bandwidth Product • Compact TO−220 Package • These Devices are Pb−Free and are RoHS Complian Applications Designed for use in general purpose amplifier and switching applications. Date Sheet Product Attribute Attribute Value Manufacturer:

Brand Name:Anterwell

Model Number:2SB649A

Place of Origin:original factory

2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL ...

Brand Name:Hua Xuan Yang

Model Number:G210P06LQ1 D-U-V

Place of Origin:ShenZhen China

...Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) Mos Field Effect Transistor Applications...

Brand Name:Hua Xuan Yang

Model Number:G210P06LQ1 D-U-V

Place of Origin:ShenZhen China

...Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) Mos Field Effect Transistor Applications...

Brand Name:Toshiba

Model Number:2SC5200

Place of Origin:Original

...Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications • power amplification Date Sheet Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor...

Brand Name:Infineon

Model Number:IRGP4063DPBF

Place of Origin:Original

IRGP4063DPBF IGW50N60H3 IGP50N60T IKD06N60RA Insulated Gate Bipolar Transistor Applications •uninterruptible power supplies •welding converters •converters with high switching frequency Specifications Product Attribute Attribute Value Package / ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART ...

Brand Name:Analog Devices Inc.

Model Number:HMC789ST89ETR

Place of Origin:Multi-origin

...Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications. Features: - High-performance, high-frequency, high-power transistor...

Brand Name:Silicon Labs

Model Number:SI4702-C19-GMR

Place of Origin:Multi-origin

.... This device is suitable for applications such as cellular base stations, repeaters, and consumer wireless applications. It is designed with a high breakdown voltage of 30V, a maximum drain current of 10.5A, and an on-state resistance of 0.065Ω.

Brand Name:Anterwell

Model Number:2SC5200

Place of Origin:original factory

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 15A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High ...

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

...Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN devices New enhanced series High switching speed hFE grouping hFE improved linearity ​Applications...

Brand Name:Anterwell

Model Number:MJD112T4G

Place of Origin:original factory

... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available •

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor...

Brand Name:Toshiba

Model Number:2SC4793

Place of Origin:JAPAN

...Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SA1837 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications Product Attribute Attribute Value Mounting Style: Through Hole Transistor...

Brand Name:Original brand

Model Number:A3G20S250-01SR3

Place of Origin:Original

... the frequency range of 1800 to 2200 MHz. This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of

Brand Name:Hua Xuan Yang

Model Number:AOD409

Place of Origin:ShenZhen China

...Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications...

Brand Name:Hua Xuan Yang

Model Number:AOD409

Place of Origin:ShenZhen China

...Transistor , Power Darlington Transistor General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications...