transistor application

Brand Name:ST

Model Number:D45H8

Place of Origin:CHINA

... speed Applications ■ Power amplifier ■ Switching circuits Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications Product Attributes Select All

Brand Name:Hua Xuan Yang

Model Number:AP12N10D

Place of Origin:ShenZhen China

...Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application...

Brand Name:Hua Xuan Yang

Model Number:AP12N10D

Place of Origin:ShenZhen China

...Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

... IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor...

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features Designed for General purpose linear and switching applications...

Brand Name:onsemi

Model Number:FGH40N60SFD

Place of Origin:Original Factory

... Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications whe...

Brand Name:onsemi

Model Number:SGL160N60UFD

Place of Origin:Original Factory

...Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications suc...

Brand Name:Silicon Labs

Model Number:SI4463-C2A-GMR

Place of Origin:Multi-origin

SI4463-C2A-GMR RF Power Transistors Product Description: The SI4463-C2A-GMR RF Power Transistors are designed for use in high-efficiency, high-power wireless applications. These transistors are capable of producing up to 125W of peak power and up to 40W...

Brand Name:Analog Devices Inc.

Model Number:HMC326MS8GETR

Place of Origin:Multi-origin

... Power Transistor - High Power High Linearity HMC326MS8GETR, GaAs pHEMT, RF Power Transistor Product Description: The HMC326MS8GETR is a high-performance, GaAs pHEMT, RF power transistor. It is designed for use in a wide variety of applications such as ...

Brand Name:Analog Devices Inc.

Model Number:HMC199MS8ETR

Place of Origin:Multi-origin

... Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high power applications up ...

Brand Name:Analog Devices Inc.

Model Number:AD630ARZ

Place of Origin:Multi-origin

...Transistor 300V 7A 60W TO-220 Package Product Listing: Product Name: AD630ARZ RF Power Transistor Product Description: This AD630ARZ RF Power Transistor is a high-performance, high-efficiency device designed for use as a power amplifier in wireless communication systems. It provides excellent linearity and efficiency, and is suitable for use in applications...

Categories:RF Transistors

Country/Region:china

...Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:2N3906

...Plastic-Encapsulate Transistors 2N3906 ​TRANSISTOR (NPN). FEATURE Ÿ PNP silicon epitaxial planar transistor for switching and Amplifier applications Ÿ As complementary type, the NPN transistor 2N3904 is Recommended Ÿ This transistor is also available...

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:2N3906

...Plastic-Encapsulate Transistors 2N3906 ​TRANSISTOR (NPN). FEATURE Ÿ PNP silicon epitaxial planar transistor for switching and Amplifier applications Ÿ As complementary type, the NPN transistor 2N3904 is Recommended Ÿ This transistor is also available...

Brand Name:MA-COM

Model Number:MRF151G

Place of Origin:USA

...Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278 Features 1, Guaranteed Performance at 175 MHz, 50 V 2, Output Power — 300 W • Gain — 14 dB (16 dB Typ) 3, Efficiency — 50% • Low Thermal Resistance — 0.35°C/W 4, Ruggedness Tested at Rated Output Power 5, Nitride Passivated Die for Enhanced Reliability Description and Applications Designed for broadband commercial and military applications

Brand Name:Mitsubishi

Model Number:RD100HHF1

Place of Origin:JP

....on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER ...