single field effect transistor

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor...

Model Number:FDS9435A

Place of Origin:original factory

FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management ...

Brand Name:original

Model Number:WSF28N06

Place of Origin:Guangdong, China

.... It is commonly used in power supply circuits and other switching applications. Specification item value Model Number WSF28N06 Type Bipolar Transistor Place of Origin China Guangdong D/C

Place of Origin:PHILIPPINE

Brand Name:FREESCALE

Model Number:MRF6S9045NR1

...Field Effect Transistors Description: Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single...

Brand Name:NEXPERIA

Model Number:NX7002AK

Place of Origin:CHINA

... Active SVHC Yes Automotive No PPAP No Product Category Small Signal Configuration Single Process Technology TMOS Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) ...

Brand Name:NEXPERIA

Model Number:NX7002AK

Place of Origin:CHINA

... Active SVHC Yes Automotive No PPAP No Product Category Small Signal Configuration Single Process Technology TMOS Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) ...

Brand Name:Hua Xuan Yang

Model Number:AP7H03DF

Place of Origin:ShenZhen China

...Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. N Channel Mos Field Effect

Brand Name:Hua Xuan Yang

Model Number:AP7H03DF

Place of Origin:ShenZhen China

...Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. N Channel Mos Field Effect

Brand Name:ANTERWELL

Model Number:2SK3797

Place of Origin:Malaysia

IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 2SK3797 Field Effect Transistor Silicon N-Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) • High ...

Brand Name:Anterwell

Model Number:2SK3561

Place of Origin:original factory

N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward ...

Brand Name:FAIRCHILD

Model Number:NDS356AP

Place of Origin:Philippines

NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology...

Brand Name:Anterwell

Model Number:MMBF170

Place of Origin:original factory

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been ...

Brand Name:Anterwell

Model Number:NDT456P

Place of Origin:original factory

NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density ...

Brand Name:Anterwell

Model Number:NDS9952A

Place of Origin:original factory

NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very ...

Brand Name:ALPHA

Model Number:AO3400A

Place of Origin:China

Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V AO3400A N - Channel Enhancement Mode Field Effect Transistor General Description Feature The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ...

Brand Name:FAIRCHILD

Model Number:SSS7N60B

Place of Origin:Original

... • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.